Effect of pretreatment of chemical mechanical polishing slurry on surface quality of Al2O3/TiO2 nanolaminates

Le résumé fourni par la source

Al2O3/TiO2 nanolaminates holds great promise for photodetection and integrated circuits, in which high-quality Al2O3/TiO2 nanolaminates with planarization are cornerstones. Chemical mechanical polishing (CMP) is the critical technology in the planarization of Al2O3/TiO2 nanolaminates. This study aims to optimize the polishing process used at present to obtain a polishing method suitable for Al2O3/TiO2 nanolayer, and finally obtain the surface of Al2O3/TiO2 nanolayer with no scratch and roughness < 0.3nm. The effects of pH of polishing liquid, rotating speed of polishing disc, flow rate of polishing liquid and pre-ultrasonic of polishing liquid on the removal amount and roughness of Al2O3/TiO2 film layer were studied by single factor comparison test. A pretreatment strategy for CMP is proposed, achieving surface roughness below 0.3 nm. This research has significant reference value for the fabrication and application of high precision Al2O3/TiO2 nanolaminates.

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