Electric Fields in Polarized GaInN/GaN Heterostructures

Le résumé fourni par la source

As evidenced by the recent development of the wide band gap group-III nitrides as fully functional semiconductors, group-III nitride semiconductors come with a set of rather unusual properties that render them most advantageous performance in a very wide range of applications. Key achievements [ 1 , 2 ] in terms of crystalline quality [ 3–8 ] and full n and p -type conduction [ 9 ] initiated the development of high-luminance light-emitting diodes covering the entire visible spectrum and the near UV [ 10 ], blue and UV laser diodes [ 11–13 ], solar blind photodetectors [ 14 ], high temperature electronics [ 15 ], high power electronics [ 16 ] as well as high frequency electronics [ 17 ], for example microwave power in the 20 GHz range [ 18 ]. In this phase of this most successful development it is essential to develop a clear picture of the electronic band structure in this system and its peculiarities to take full advantage of its capabilities [ 2 , 19 ] and to elucidate the fundamental principles leading to those dearly sought-for properties.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.