Dry resist patterning development towards high-NA EUV lithography

Le résumé fourni par la source

An all-EUV dry resist technology offers a fundamentally new way to enable resist processing targeting differentiating capabilities for high NA lithography. Dry deposition of resists offers stochastic benefits with precise control over thickness and composition. Dry development enables in-situ tuning of development and also improves pattern collapse margin for higher aspect ratios. In this talk, we establish the progress of dry resist development toward extending the limits of single expose with 0.33NA EUV lithography. We assess electrical yield performance with a BEOL Cu-dual damascene test vehicle at aggressive 28nm and 26nm single expose metal pitches and correlate with defect metrology. We also present improvements in 26/28nm pitch line/space patterning and sub-40nm pitch contact hole patterning by optimization of process parameters such as underlayer, bake, dry development and pattern transfer.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.