Self-Amorphizing GasCluster IonBeamTechnology andCombination with LaserSpike AnnealforHighly Scaled Source DrainJunction

Le résumé fourni par la source

Highenergy borane (B2H6) gascluster ionbeam (GCIB) successfully enables asub-1 Onmbox-shaped dopant profile without channeling tail, andsteep gradient (2.5nm/dec) inlateral direction. pFETusing GCIB source/drain extension showssuperior suppression ofshort channel effects andreduces the dependency of drivecurrent on gateoverlap capacitance variation forscaled devices. Moreover, the perimeter leakage component inp+/n-well junction was reducedcomparedto the conventional co-implantation processwithpre-amorphization, whichmightcomefromnovelself-amorphization mechanism by energized clusters without foreign impurities suchasGeandF.Forfurther scaled devices, GCIBcanprovide moreefficient boronactivation by laser spike annealing (LSA)whilemaintaining the scaled extension profile bycombination withthe reduced temperature spike RTA.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.