Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model method

Le résumé fourni par la source

An electric-field-dependent trapping effect was observed in our AlGaN/GaN transmission-line-model (TLM) structure. Therefore, we adopted a “gradual voltage stress” scheme to induce a similar trapping effect, that is, a similar sheet resistance variation (ΔRSH) for all intervals of our AlGaN/GaN TLM structure. By measuring the TLM structure under “gradual voltage stress” (stressed TLM measurement), we investigated the trapping effects in gateless AlGaN/GaN heterojunction field-effect transistors. 10 nm of Al2O3 passivation film substantially decreased the voltage-stress-induced ΔRSH, suggesting surface traps were involved. The feasibility and reproducibility of the stressed TLM measurement method was confirmed with repeated passivation.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.