Varsha Ashwin Vedaraj

Thermoradiative Diodes Using Black Phosphorus van der Waals Materials

Yuchen Sun, Jamie Harrison, Yiyang Cui, Yumin Li et autres

ABSTRACT The high radiative efficiencies and strong absorption coefficients of van der Waals materials position them well for optoelectronic power generation via radiative exchange. These materials have been investigated for use in solar cells, however, their use in thermoradiative and thermophotovoltaic applications …

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Integration of Refractive Microlenses on BP/MoS 2 Photodiodes for Enhanced Infrared Photodetection

Varsha Ashwin Vedaraj, Daniel Fan, Jinyuan Chen, Seyed Saleh Mousavi Khaleghi et autres

ABSTRACT The van der Waals materials have emerged as promising candidates for infrared (IR) photodetectors. Among these, black phosphorus (BP)/ molybdenum disulphide (MoS 2 ) photodiodes have shown high specific detectivity at room‐temperature. The signal‐to‐noise performance of such detectors can be further …

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Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm

Xiaolong Liu, Sören Schäfer, Jinyuan Chen, Patrick Mc Kearney et autres

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Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm

Xiaolong Liu, Sören Schäfer, Jinyuan Chen, Patrik Mc Kearney et autres

Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit offers a promising "silicon-native" alternative, yet achieving practical short-wave infrared applications at room …

Source data for "Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm"

Xiaolong Liu, Sören Schäfer, Chen Jinyuan -, Simon Paulus et autres

This dataset contains the source data underlying the main-text and Supplementary Information figures for the manuscript “Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm”. The dataset includes the minimum processed data used to generate each figure, including current–voltage characteristics, …

au, fi, de, us (code pays fourni par la source)

Source data for "Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm"

Xiaolong Liu, Sören Schäfer, Chen Jinyuan -, Simon Paulus et autres

This dataset contains the source data underlying the main-text and Supplementary Information figures for the manuscript “Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm”. The dataset includes the minimum processed data used to generate each figure, including current–voltage characteristics, …

au, fi, de, us (code pays fourni par la source)

Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm

Xiaolong Liu, Sören Schäfer, Jinyuan Chen, Patrik Mc Kearney et autres

Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit offers a promising "silicon-native" alternative, yet achieving practical short-wave infrared applications at room …

au, fi, de (code pays fourni par la source)