Genquan Han

Thickness Scaling of High‐Permittivity HfO 2 /ZrO 2 Superlattice Capacitors With Morphotropic Phase Boundary

Xihui Yuan, Kaixuan Li, Yanwei Zhang, Haiwen Xu et autres

ABSTRACT HfO 2 /ZrO 2 superlattice (SL) materials hold significant promise for high‐performance electronics, primarily due to their low‐power consumption and seamless compatibility with complementary metal‐oxide‐semiconductor (CMOS) technologies. However, the stringent requirements for dimensional scaling and high‐density integration in advanced memory technologies …

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Effect of Strain Induced by Varying Bottom Electrode Thicknesses on Ferroelectric Properties of Pt/Al0.7Sc0.3N/Pt Capacitors

Yuan Fang, Xiaoxi Li, J J Li, Haiwen Xu et autres

Aluminum scandium nitride (Al1-xScxN) has emerged as a promising candidate for next-generation nonvolatile memories owing to its excellent large remanent polarization (Pr), high Curie temperature, and CMOS compatibility. However, its ferroelectric characteristics are highly sensitive to strain, which limits device scalability. Herein, …

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Modeling of Polarization Dynamics in HfO 2 -Based Ferroelectrics by Reduced L-K Model

Bing Chen, Haoran Yu, Wenhao Liu, Shuyu Zhang et autres

A multi-domain reducedL-Kmodel based on the physical fundamentals has been developed to mimic the dynamic behaviors of the HfO2-based ferroelectric (FE) devices. Based on the model, the calculated polarization-voltage (P-V) curves coincide well with the experimental data from the fabricated metal-FE oxide-metal …

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Ultrafast and Sensitive NiO/Ga 2 O 3 Lateral Superjunction Photodetectors for Solar-Blind Ultraviolet Detection

Xiaoxi Li, Yang Zhou, Zhifan Wu, Yue Wang et autres

Ultrahigh responsivity has been reported in Ga2O3 solar-blind photodetectors, but their response speed still remains a significant challenge for practical applications. Here, lateral NiO/Ga2O3superjunction p-n photodetectors are demonstrated, simultaneously achieving high responsivity and fast response. The devices exhibit a record photo to …

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NH$_{3}$ Plasma Surface Treatment in $β$-Ga$_{2}$O$_{3}$: Interface Trap Density Reduction and MOSFET Performance Gains

Xiaole Jia, Shuqi Huang, Yue Wang, Bochang Li et autres

In this work, an NH3plasma treatment (NPT) is introduced to engineer the Al2O3/$\beta $-phase gallium oxide ($\beta $-Ga2O${}_{{3}}\text {)}$interface for high-performance MOS devices. The NPT effectively suppresses Ga suboxide-related surface states, leading to substantial reduction of interface trap density (${D}_{\text {it}}\text {)}$. …

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Author response for "One-Dimensional Wide-Bandgap Semiconductor β-Ga2O3 Nanorods for High-Performance Solar-Blind Ultraviolet Photodetectors"

Jiateng Zhang, Zixuan Cheng, Yong Wang, Dingyi Yang et autres

Interface-engineered Ga2O3 photodetectors with quantum-dot-assisted band modulation for spectrum-selective UVC detection

Xiaoxi Li, Yang Zhou, Zhifan Wu, Yu Wang et autres

Achieving fast and highly sensitive ultraviolet-C (UVC) detection under ultra-weak illumination remains challenging due to inefficient carrier separation and severe interfacial recombination in wide-bandgap semiconductors. Here, we report an interface-engineered Ga 2 O 3 -based photodetector by integrating p-type NiO quantum dots …

Understanding Frequency-Dependent Accelerated Degradation Mechanisms in HfO 2 -Based 3-D Trench FeRAM

Fei Yu, Xingcheng Jin, Chongyong Guo, Hongbo Li et autres

In this work, the frequency-dependent accelerated degradations (FDADs) mechanism in the novel 3-D trench hafnium oxide (HfO2)-based ferroelectric random access memory (FeRAM) has been comprehensively analyzed. The increased delay time (${t}_{\text {d}}$) between bipolar switching pulses is found to intensify remanent polarization …

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4.1/3.5 kV breakdown voltage in depletion/enhancement-mode MOCVD-grown Ga 2 O 3 MOSFETs on sapphire substrates

chunxiao Yu, Yibo Wang, Bochang Li, Chenyu Liu et autres

Abstract In this work, we realized high-performance β -Ga 2 O 3 power MOSFETs grown via metal-organic chemical vapor deposition on sapphire substrates. High-resolution X-ray diffraction and HRTEM characterization confirmed single crystallinity of the β -Ga 2 O 3 heteroepitaxial film on …

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Trap-Induced Instability in β -Ga 2 O 3 Solar-Blind Phototransistors Under Electro-Optical Stress

Shuqi Huang, Xiaoxi Li, Haoji Qian, Yang Zhou et autres

The trap-assisted instability in$\beta $-Ga2O3solar-blind phototransistors under long-term electro-optical stress is systematically investigated. Under the negative bias stress (NBS) in the dark, threshold voltage (${V}_{\text {th}}\text {)}$first shifts slightly negative at −3 V and then positive to 0.05 V at −5 V, …

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Retention Characteristics of HfO 2 -based MFMIS FeFETs: Degradation Mechanism Revealed by Fast-PRER Measurement

Peiyuan Du, Fei Yu, Yutai Man, Huan Liu et autres

Nonvolatile, low-voltage ferroelectric field-effect transistors (FeFETs) are promising for energy-efficient embedded storage in advanced logic and neuromorphic systems. The MFMIS FeFETs with a separated transistor fabricated by standard CMOS process and a gate-coupled ferroelectric capacitor have the advantages of ease of CMOS …

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Enhancing Ferroelectric Performance of Al 0.7 Sc 0.3 N Capacitors through Substrate Engineering

Yuan Fang, Haoji Qian, Xiaoxi Li, J J Li et autres

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