Characterization and Modeling of Interfacial Photogating Effect in Graphene Field-Effect Transistor Photodetectors on Silicon
Leslie Howe, Kalani H. Ellepola, Nusrat Jahan, Brady Talbert et autres
High Resolution Image Download MS PowerPoint Slide Infrared photodetection of silicon is prevented by the bandgap energy at wavelengths longer than approximately 1100 nm (∼1.12 eV) at room temperature, while silicon is the most used in modern electronics. Of particular interest is …
cz, us (code pays fourni par la source)
16 citations
ACS Applied Electronic Materials