Bias frequency effects on the high-aspect-ratio trench etching of hard mask and dielectric layers in Ar/O 2 /C 4 F 6 /C 4 F 8 dual-frequency capacitively coupled plasma
Jong‐Bae Park, Jong Hyeon Shin, S S Kim, Hee-Jung Yeom et autres
Abstract The effect of bias frequency on plasma characteristics and etching performance was investigated in a dual-frequency capacitively coupled plasma system, with 100 MHz source power fixed at the upper electrode and bias frequency varied at the lower electrode between 2 and …
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