David Daomin Zhou

Thickness-dependent polarization modulation at AlN interlayers in GaN heterostructures revealed by atomic-scale 4D-STEM

Jiamin Tian, Fangren Shen, Yitian Gu, Zidong Cai et autres

The performance of GaN-based high-electron-mobility transistors (HEMTs) hinges on the two-dimensional electron gas (2DEG) concentration induced by polarization fields at heterojunction interfaces. The AlN interlayer, critical for optimizing interfaces and 2DEG transport, requires atomic-scale understanding of its thickness-dependent polarization modulation, especially at …

Author response for "Thickness-Dependent Polarization Modulation at AlN Interlayers in GaN Heterostructures Revealed by Atomic-Scale 4D-STEM"

Jiamin Tian, Fangren Shen, Yitian Gu, Zidong Cai et autres

Author response for "Thickness-Dependent Polarization Modulation at AlN Interlayers in GaN Heterostructures Revealed by Atomic-Scale 4D-STEM"

Jiamin Tian, Fangren Shen, Yitian Gu, Zidong Cai et autres

Scheduled feeding improves behavioral outcomes and reduces inflammation in a mouse model of fragile X syndrome

Huei Bin Wang, Natalie E Smale, Sarah H Brown, Sophia AMB Villanueva et autres

Fragile X syndrome (FXS), a leading inherited cause of intellectual disability and autism, is frequently accompanied by sleep and circadian rhythm disturbances. In this study, we comprehensively characterized these disruptions and evaluated the therapeutic potential of a circadian-based intervention in the fragile …

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Understanding the Role of Buffer Traps in GaN HEMTs: A Simulation Study on Dynamic Ron

Haiyang Li, Mengqi Jonathan Fan, Xinyue Dai, Xiaoping Wang et autres

This work employs calibrated Technology Computer-Aided Design (TCAD) simulations to analyze buffer trap behavior under varying stress amplitude (Vstress) and duration (tstress) conditions and its impact on dynamic onresistance (Ron) degradation. Two distinct degradation phases are identified: (I) a Vth-shift dominant phase; …

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Investigation of L-FER ESD Protection Capability on E-mode p-GaN HEMT

Junye Wu, Yitian Gu, Chao Feng, Danfeng Mao et autres

In this work, several lateral field effect rectifiers (L-FERs) were investigated as electrostatic discharge (ESD) protection circuit for p-GaN AlGaN/GaN HEMTs. Four different ESD protection circuits were fabricated simultaneously for comparison, based on a Complementary Metal Oxide Semiconductor (CMOS)-compatible 6-inch GaN-on-Si platform. …

A Dual-Voltage 650 V and 100 V GaN Integrated Platform Featuring High-Performance Monolithic Components

Yanlin Wu, Junye Wu, Zuoheng Jiang, Danfeng Mao et autres

This paper presents two integrated platforms developed by PH laboratory: a 650 V platform and a 100 V platform. Both platforms feature high-performance e-mode GaN HEMTs and a variety of passive components, including 2DEG resistors, metal resistors, p-GaN stack capacitors, M/2DEG capacitors, …

Dual- Vs. Single-Peak Transconductance Evolution in Schottky $p$-Gan Gate Hemts: Influence of Partially and Fully Depleted $p$-Gan Layer

Xuan Liu, Chao Feng, Yuhao Wang, Xinyue Dai et autres

In this work, four groups of wafers with distinct Mg activation levels were fabricated, consisting of three partially depleted$\boldsymbol{p}$-GaN (PDP-GaN) layers and one fully depleted$\boldsymbol{p}$-GaN (FDP-GaN) layer. Reduced Mg activation induces anomalous dual-peak transconductance ($G \mathrm{m}$) in PDP-GaN devices, a phenomenon rarely …

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Stability of VTH and RON in p‐GaN Schottky‐Gate AlGaN/GaN High‐Electron‐Mobility Transistors under Reverse and Gate Bias Stress: Impact of Gate Offset

Chao Feng, Xuan Liu, Haiyang Li, Danfeng Mao et autres

Herein, the impact of the gate‐to‐p‐GaN offset on the performance of normally off p‐GaN Schottky‐gate AlGaN/GaN high‐electron‐mobility transistors under continuous reverse and gate bias stress is investigated for the first time. Devices with varying offsets are fabricated and analyzed. Large‐offset device features …

Subthreshold and turn-on characteristics in Schottky-type p-GaN Gate HEMTs: impact of partially and fully depleted p-GaN layer

Xuan Liu, Chao Feng, Danfeng Mao, Rongxin Du et autres

Abstract In this work, the impact of partially depleted and fully depleted p-GaN (PDP-GaN and FDP-GaN) layers on the gate characteristics of Schottky-type p-GaN Gate HEMTs is investigated. Four wafers are fabricated via different annealing temperatures to achieve the PDP-GaN and FDP-GaN …

1200 V GaN-on-Si Junction Barrier Schottky (JBS) Diodes by an E-Mode-Compatibe Process

Wensong Zou, David Daomin Zhou, Jin-Shi Zhang, Ran Chen et autres

Here we report GaN-on-Si JBS diodes based on an e-mode-compatible process. Thanks to a judicious design of p-GaN islands in the anode, the JBS diode presents enhanced breakdown voltage$(V_{\text{BR}})$of$-1267\pm 23\ \mathrm{V}$with diminished reverse current$(I_{\mathrm{R}})$of$0.40\pm 0.07\ \mu \mathrm{A}/\text{mm}$at −600 V. The JBS structure …

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Analysis of On-Resistance in 650-V Enhancement-Mode Active-Passivation p-GaN Gate HEMT

Yanlin Wu, Junjie Yang, Jingjing Yu, Hao Chang et autres

This work investigates the resistance distribution of the E-mode GaN-on-Si active-passivation (AP) p-GaN gate high-electron-mobility transistor (HEMT) using the transfer length method (TLM). The AP-HEMT has a unique active-passivation layer that is electrically connected to the p-GaN gate and covers most area …