Profil bibliographique

Z. G. Hu

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

5Publications signalées
91Citations signalées
2Affiliations récentes

Les institutions déclarées

Shanxi UniversityEast China Normal University

Les domaines associés

ZnO doping and propertiesGa2O3 and related materialsGas Sensing Nanomaterials and SensorsAdvanced Polymer Synthesis and CharacterizationPolymer composites and self-healing

Les publications récentes

2026 article OpenAlex

Flexoelectricity‐Driven Self‐Powered Photodetectors for Information Transmission and Image Processing

Zhaotan Gao, Hongli Chen, Can Zhao, Zhangchen Hou et autres

ABSTRACT In the digital information age, self‐powered photodetectors are crucial for meeting the demands of high‐density integration and low power consumption. The flexoelectric effect provides a mechanical approach for the development of high‐efficiency and low‐energy consumption photoelectronic devices. Here, an asymmetric suspended …

cn (code pays fourni par la source)

2 citations Advanced Functional Materials
2023 article OpenAlex

Reprocessible Triketoenamine‐Based Vitrimers with Closed‐Loop Recyclability

Z. G. Hu, Fan Hu, Lifeng Deng, Yumin Yang et autres

Development of thermosets that can be repeatedly recycled via both chemical route (closed-loop) and thermo-mechanical process is attractive and remains an imperative task. In this work, we reported a triketoenamine based dynamic covalent network derived from 2,4,6-triformylphloroglucinol and secondary amines. The resulting …

cn, us (code pays fourni par la source)

44 citations Angewandte Chemie International Edition
2011 article OpenAlex

Diversity of electronic transitions and photoluminescence properties in nanocrystalline Mn/Fe-doped tin dioxide semiconductor films: An effect from oxygen pressure

Wenlei Yu, Wenwu Li, Jiao Wu, Jinghua Sun et autres

Transition metal (TM: Mn or Fe) doped tin dioxide (SnO2) films with the compositions of 5% (Sn0.95TM0.05O2) have been deposited on sapphire substrates by pulsed laser deposition under oxygen pressure (Po) varied from 10−4 to 1 Pa. The x-ray diffraction, scanning electron …

cn (code pays fourni par la source)

10 citations Journal of Applied Physics
2010 article OpenAlex

Far-Infrared−Ultraviolet Dielectric Function, Lattice Vibration, and Photoluminescence Properties of Diluted Magnetic Semiconductor Sn1−xMnxO2/c-Sapphire Nanocrystalline Films

Wenlei Yu, Wenwu Li, Jinchi Wu, Jinghua Sun et autres

Optical properties of Sn 1− x Mn x O 2 ( x from 0.0 to 0.15) nanocrystalline films grown on c -plane sapphire substrates have been investigated at room temperature by ultraviolet-infrared transmittance, far-infrared reflectance, and photoluminescence spectra. The X-ray diffraction analysis …

cn (code pays fourni par la source)

13 citations The Journal of Physical Chemistry C
2009 article OpenAlex

Concentration Dependence of Optical Properties in Arsenic-Doped ZnO Nanocrystalline Films Grown on Silicon (100) Substrates by Pulsed Laser Deposition

Wenwu Li, Z. G. Hu, Jinchi Wu, Jinghua Sun et autres

Arsenic (As)-doped (1% to 3%) ZnO nanocrystalline films with the grain size of 20 nm have been grown on silicon substrates by pulsed laser deposition. X-ray diffraction analysis shows that the films are polycrystalline and exhibit the hexagonal wurtzite phase. The As …

cn (code pays fourni par la source)

22 citations The Journal of Physical Chemistry C
Profil ORCIDNotice OpenAlex

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