Matthew J. Steer

Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth

Heera Menon, Nicholas Morgan, Crispin Hetherington, Robin Athle et autres

InSb has the smallest bandgap and highest electron mobility among III‐V semiconductors and is widely used for photodetectors and high‐frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very …

se, ch, gb (code pays fourni par la source)

Increase in terahertz-wave generation by difference frequency mixing by the overlap of exciton states in different GaAs/AlAs quantum wells and spectroscopic measurements

Kanta Sakaue, Osamu Kojima, Takashi Kita, Matthew J. Steer et autres

Intense terahertz-wave emission in the higher frequency region can result in various applications such as terahertz spectroscopy and ultrafast data communication. In this study, an increase in terahertz waves by the overlap of exciton states in different quantum wells and spectroscopic demonstration …

jp, gb (code pays fourni par la source)

Modulation of exciton states through resonant excitation by continuous wave lasers in a GaAs/AlAs multiple quantum well

Osamu Kojima, Takashi Kita, Matthew J. Steer, R. A. Hogg

Abstract Interactions between excitons with different energies are significant in device application, particularly in the emission of intense terahertz (THz) waves caused by difference frequency mixing. In this paper, the interactions of excitons generated by two resonant continuous-wave laser beams are assessed …

jp, gb (code pays fourni par la source)

Improved quality of InSb-on-insulator microstructures by flash annealing into melt

Heera Menon, Lasse Södergren, Robin Athle, Jonas Johansson et autres

Abstract Monolithic integration of III–V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt …

se, gb (code pays fourni par la source)

Resonant exciton excitation photoluminescence and dynamics in a GaAs/AlAs multiple quantum well with internal electric field

Osamu Kojima, Takashi Kita, Matthew J. Steer, R. A. Hogg

The stability of excitons with large oscillator strengths at room temperature has been of great significance in device applications. In this paper, we report the effects of the ultrafast dissociation of excitons confined in a quantum well on optical characteristics. The photoluminescence …

jp, gb (code pays fourni par la source)

Diabolical Points in Coupled Cavities with Quantum Emitters

Jingnan Yang, Chenjiang Qian, Xin Xie, Kai Peng et autres

Here we propose a macroscopical control of the backscattering direction by optimizing the cavity size. The backscattering directions are confirmed with two strongly-coupled microdisks and diabolical points are achieved at the resonance of two microdisks.

cn, gb (code pays fourni par la source)

InSb Avalanche Photodiodes on GaAs Substrates for Mid-Infrared Detection

Yasaman Alimi, Vincenzo Pusino, Matthew J. Steer, David R. S. Cumming

We present indium antimonide-based devices for mid-infrared (mid-IR) detection with enhanced sensitivity. InSb devices will be useful for many applications, such as gas sensing and imaging. InSb avalanche photodiodes (APDs) monolithically integrated with GaAs substrates were fabricated with diameters ranging from 90 …

gb (code pays fourni par la source)

Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning

David Alan John Millar, Uthayasankaran Peralagu, Xu Li, Matthew J. Steer et autres

The results of an investigation into the impact of in situ H2 plasma exposure on the electrical properties of the p/n-In0.3 Ga0.7 Sb-Al2O3 interface are presented. Samples were processed using a clustered inductively coupled plasma reactive ion etching and atomic layer deposition …

gb, be, ie (code pays fourni par la source)

Mid-infrared light-emitting diodes

A. Krier, Eva Repiso, Furat A. Al-Saymari, Peter J. Carrington et autres

gb, es (code pays fourni par la source)

InSb Avalanche Photodiodes on GaAs Substrates for Improved Mid-IR Detection

Yasaman Alimi, Vincenzo Pusino, Matthew J. Steer, David R. S. Cumming

Integration of InSb on Si by Rapid Melt Growth

Heera Menon, Matthew J. Steer, Iain Thayne, Johannes Svensson et autres

Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. Dissimilarities in the crystal structure symmetry and large lattice mismatch …

gb (code pays fourni par la source)

Enhanced Strong Interaction between Nanocavities and p -shell Excitons Beyond the Dipole Approximation

Chenjiang Qian, Xin Xie, Jingnan Yang, Kai Peng et autres

Large coupling strengths in exciton-photon interactions are important for the quantum photonic network, while strong cavity-quantum dot interactions have been focused on s-shell excitons with small coupling strengths. Here we demonstrate strong interactions between cavities and p-shell excitons with a great enhancement …

cn, gb (code pays fourni par la source)