K. Park

High Performance and Reliable 4F2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM

Daewon Ha, Yunsung Lee, Kyoung-Jun Moon, Sangmoon Lee et autres

For the first time, we present experimental demonstration of a high-performance and highly reliable IGZO vertical channel transistor (VCT). It exhibits excellent leakage current$(< 0.1 \text{aA}/\mu \mathrm{m})$and switching characteristics$(98\ \text{mV}/\text{dec})$with VTof -0.13V at$85^{\circ}\mathrm{C}$. Furthermore, it provides a symmetric IONof 49.5$\mu \mathrm{A}/\mu \mathrm{m}$at …

kr (code pays fourni par la source)

Novel Three-Dimensional DRAM Cell Architectures with IGZO-Channel and Key Technologies Toward Sub-10nm and Beyond

Wonsok Lee, Daewon Ha, Yunsung Lee, Seung‐Hwan Yoo et autres

As DRAM device dimension approaches 10nm scale and below in buried cell array transistors (BCAT), it is indispensable to adopt innovative cell structures and/or new materials for the next generation DRAM architecture. In this paper, three promising candidates of IGZO-based DRAM cell …

kr (code pays fourni par la source)

P1.12B.10 Dose Adjustments and Exposure-Response Associated with Selpercatinib in Patients with Advanced NSCLC

K. Park, Edurne Arriola, Maurice Pérol, C.Z. Zhou et autres

us, kr, es, fr, cn, jp, hk, au (code pays fourni par la source)

IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites

Yongjin Lee, Daewon Ha, W. Lee, Seung‐Hwan Yoo et autres

In DRAM technology at nodes below 10 nm, scaling down conventional architectures presents significant challenges due to uprising physical limit on integration and electrical properties. As alternatives, innovative structures incorporating deposition channels, such as VCT with IGZO channels, are being explored. This …

kr (code pays fourni par la source)

Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node

Daewon Ha, Yunsung Lee, Seung‐Hwan Yoo, W. Lee et autres

In order to sustain DRAM scaling trajectory below 10nm node, it is indispensable to adopt innovative cell structures, advanced processes and novel materials such as IGZO. In this paper, we will discuss promising candidates for IGZO-based DRAM cell architecture including vertical channel …

kr (code pays fourni par la source)

M051 The variant call format normalization is essential for the accuracy of variant nomenclature

K. Park, Joohyuk Park, Eunyi You, Hun-min Kim et autres

kr (code pays fourni par la source)

OA05.05 Avelumab vs Docetaxel for Previously Treated Advanced NSCLC: Primary Analysis of the Phase 3 JAVELIN Lung 200 Trial

Fabrice Barlési, Johan Vansteenkiste, David Robert Spigel, Hidenobu Ishii et autres

fr, be, us, jp, it, tr, gb, pl, kr, cl, de (code pays fourni par la source)

P1.01-070 BIW-8962, an Anti-GM2 Ganglioside Monoclonal Antibody, in Advanced/Recurrent Lung Cancer: A Phase I/II Study

Jeon Lee, Jae‐Hoon Kim, S. Kim, Jin U. Kang et autres

kr, jp, fr (code pays fourni par la source)

MA 03.06 Effect of 2L Ramucirumab after Rapid Time to Progression on 1L Therapy: Subgroup Analysis of REVEL in Advanced NSCLC

Martin Reck, Frances Alice Shepherd, Maurice Pérol, Federico Cappuzzo et autres

fr, it, tw, kr, us (code pays fourni par la source)

P3.01-082 Surgical Rebiopsy in Advanced Non-Small Cell Lung Cancer Resistant to Previous Chemotherapy

Sang Hyun Shin, Ju Hee Cho, H.K. Kim, Y.S. Choi et autres

kr (code pays fourni par la source)

P3.01-050 A Real World Treatment Study of Osimertinib: ASTRIS Study Korean Subgroup Analysis

Byoung Chul Cho, Dahee Kim, K. Park, Jinyi Lee et autres

kr, us (code pays fourni par la source)

P3.01-023 First-line Afatinib for Non-Small Cell Lung Cancer in Real World Practice

Yeon Wook Kim, Jong‐Mu Sun, K. Park, S.E. Park et autres

kr (code pays fourni par la source)