Xiangbao Xu

A Dual-Band Photodetector Based on van der Waals Barrier Engineering

Jiyue Zhang, Yi Dong, Xinyu Ma, Xiangbao Xu et autres

cn (code pays fourni par la source)

Stable b‐AsP/InSe Mid‐Infrared Detector with High Polarization‐Sensitivity for Target Feature Discrimination

Jiachang Chen, Xiangbao Xu, Cheng Chen, Jialin Li et autres

Abstract The development of next‐generation polarized mid‐infrared imaging systems demands miniaturization, high polarization ratio, room‐temperature operation and atmospheric stability. Compared to bulk materials, 2D anisotropic materials provide a new route for realizing miniaturized polarized photodetectors. However, their infrared sensing capabilities, particularly for …

cn (code pays fourni par la source)

An optical bandwidth optimization method for non-dispersive infrared gas sensors

Haitao Wu, Songsong Zhang, Hui Qiao, Dezheng Guo et autres

cn (code pays fourni par la source)

van der Waals Complementary Barrier Infrared Detector

Xiangbao Xu, Jie Chen, Haitao Wu, Dezheng Guo et autres

Infrared photodetectors have garnered significant attention in modern optoelectronics due to various applications. However, uncooled infrared photodetectors based on narrow-bandgap materials suffer from high dark current arising from thermal carrier excitation, posing a major challenge in achieving state-of-the-art infrared photodetectors with a …

cn, us (code pays fourni par la source)

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Yunlong Xiao, Ke Deng, Kun Zhang, Xiangbao Xu et autres

Abstract Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 µm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped …

cn (code pays fourni par la source)