2026
article
OpenAlex
Boxiang Gao, Ruihan Xu, He Shao, Shuai Zhang et autres
The development of efficient artificial intelligence hardware has spurred interest in neuromorphic systems that unify sensing, memory, and computing. Optoelectronic synaptic transistors are appealing due to their rapid response times, broad spectral range, and low energy consumption. However, most 2D material-based systems …
hk, cn, jp
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Accès ouvert
2026
article
OpenAlex
Ruihan Xu, Boxiang Gao, Danlei Zhao, Jingzhuo Zhou et autres
Inorganic semiconductors are essential for modern electronics, but their inherent brittleness restricts their applications in flexible and wearable devices. This issue is particularly acute in low-symmetry structures, where the lack of slip systems further suppresses plastic deformation. Here, we reveal an intrinsic …
hk, cn
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2026
article
OpenAlex
Weidong Zhao, Y Li, Yulin Jiang, Yinuo Li et autres
Zinc-based sulfides are promising anodes for sodium-ion batteries (SIBs) due to their high theoretical capacities and low costs. However, inferior structural stability under high current densities leads to severe volume expansion and rapid capacity fading. Herein, a series of Se-doped, carbon-coated ZnS …
cn
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Accès ouvert
2026
article
OpenAlex
Ling Huang, J Wu, Chen-Min Dai, Ruofan Du et autres
Room-temperature ferroelectricity in two-dimensional semiconductors has ignited enormous interests due to their potential applications in non-volatile memory and neuromorphic computing, which will trigger a revolution in next-generation electronics. Nonetheless, this fascinating ferroelectricity is rarely discovered in such materials with natural central symmetry, …
cn
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Accès ouvert
2026
article
OpenAlex
Pak San Yip, Tiqing Zhao, Kefan Guo, Wenjun Liang et autres
This review explores the variety of diamond-based sensing applications, emphasizing their material properties, such as high Young’s modulus, thermal conductivity, wide bandgap, chemical stability, and radiation hardness. These diamond properties give excellent performance in mechanical, pressure, thermal, magnetic, optoelectronic, radiation, biosensing, quantum, …
hk, fr
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2025
article
OpenAlex
X. D. Li, Y Jia, Yanan Peng, Jianyong Wei et autres
ABSTRACT Developing ferroelectric semiconductors with colossal polarizations is crucial for fabricating large‐capacity/high‐density memory devices to meet the artificial intelligence demands. Although remarkable ferroelectric polarizations have been uncovered in perovskite‐type oxides, the compatibility with electronic device scaling is becoming an insurmountable bottleneck. Here, …
cn
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2023
article
OpenAlex
Longcan Chen, Wendian Yao, Tong Su, Ruihan Xu et autres
Two-dimensional van der Waals heterostructures (vdWhs) have aroused tremendous attention due to valley polarization and the interlayer coupling effect, providing a promising platform for valleytronics. However, the correlation between electron–phonon coupling (EPC) and valley depolarization is still less studied for vdWhs. In …
cn
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2023
article
OpenAlex
Hui Yuan, Ruihan Xu, Jiale Ren, Jielin Yang et autres
p-SnS/n-MoS 2 van der Waals heterostructure diodes with an ideality factor of ∼ 1.1 and high rectification ratio have been achieved, where a strong gate-dependent anisotropic rectification property has been tuned with the SnS channel length.
cn, hk
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2022
article
OpenAlex
Ruihan Xu, Hanzhe Gong, Wendian Yao, Xiaoniu Peng et autres
SnS has attracted intensive attention because of the strong anisotropic electric and optical properties along the in-plane zigzag and armchair directions. In this work, SnS nanoflakes with the lateral sizes varying from 3 to 112 μm and thicknesses varying from 2.7 to …
cn
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Accès ouvert
2018
article
OpenAlex
Haokaifeng Wu, Iori Sudoh, Ruihan Xu, Wenshuo Si et autres
Polycrystalline Mn 3 Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co 0.6 Fe 0.4 layer (3.3–9 nm thick) capped with …
gb, jp, hk, ch
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