Accès ouvert
2026
article
OpenAlex
Yihong Chen, Li Zhang, Qian Dong, Qingshi Liu et autres
ABSTRACT Understanding how coordination environments regulate catalytic pathways at single‐atom sites is central to the rational design of advanced catalysts. Here, we report a general room‐temperature strategy for constructing carbon dots‐supported single‐atom catalysts (M SACs@CDs; M = Ru, Pt, and Pd), enabling …
cn, ca
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2026
article
OpenAlex
Zheng Li, Yun He, Yang Cao, Biao Zhao et autres
cn, kg
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Accès ouvert
2026
article
OpenAlex
Yihong Chen, Quanmin Kang, Dan Nie, Peng Zhang et autres
Purpose: Accumulating evidence underscores the significance of inflammation and nutrition in tumor progression. Although low albumin-lymphocyte score (ALS) and skeletal muscle index (SMI) are known to be associated with negative outcomes in patients with ovarian cancer (OC) undergoing primary debulking surgery, the …
cn, Éthiopie, th
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Accès ouvert
2025
article
OpenAlex
Yumin Hao, Zihan Wang, Yihong Chen, Chengyu Li et autres
Carbon quantum dot (CQD)-based nanozymes have attracted growing interest for advanced biomedical applications owing to their superior catalytic activity, photostability, and biocompatibility. However, the rational design of a multifunctional nanoplatform that integrates active targeting, multimodal imaging, and synergistic therapy through a green …
cn
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2025
article
OpenAlex
Yunyan Ren, Xinyan Cheng, Yihong Chen, Huiping Wang et autres
cn
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2025
article
OpenAlex
Mengfan Xue, Zhoujun Li, Qiong Wang, Qiyu Qu et autres
cn
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Accès ouvert
2025
article
OpenAlex
Ziqi Zhang, Yan Wang, Zhenni Yang, Wenjing Xu et autres
Abstract In this work, homoepitaxial growth and in‐depth study on the electronic structure of Si doped β‐Ga 2 O 3 thin films on (100) oriented Fe doped Ga 2 O 3 substrates are reported. Carrier concentrations ranging from 3.7 × 10 18 …
cn
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Accès ouvert
2025
article
OpenAlex
Wenjing Xu, Yihong Chen, Xiaoqing Zhou, Xiangyu Xu et autres
Gallium oxide has gained significant attention due to its exceptional material properties, including an ultra-large bandgap of 4.9 eV, a high breakdown electric field of 8 MV/cm, and availability of large size bulk crystal grown by using the melt method. These merits …
cn
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2025
article
OpenAlex
Jiaren Feng, Qingzhong Gui, Taiqiao Liu, Changshuai Yin et autres
The β-Ga 2 O 3 /SiC heterojunction exhibits significant application potential across multiple fields. This work systematically investigates the influence of β-Ga 2 O 3 anisotropy and SiC polarity on interface characteristics by combining different surfaces and terminations of β-Ga 2 O …
cn, us
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Accès ouvert
2025
article
OpenAlex
Julio A. do Nascimento, Daniel Pingstone, Adam Kerrigan, Kenta Yoshida et autres
The layered structures of polar oxides (i.e., metal/oxygen/metal/oxygen/…) can be utilized to engineer the atomic structures and thus tailor the electronic properties of polar oxide/semiconductor interfaces, including the band offsets between the technologically important MgO and SiC for complementary metal–oxide–semiconductor and spintronic …
gb, jp, cn, mk, us, al
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Accès ouvert
2025
article
OpenAlex
Dongmei Li, Jing Zhang, Yihong Chen, Lin Qiao
cn
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Accès ouvert
2025
article
OpenAlex
Shenglong Wei, Xiaofeng Chen, Rongkun Chen, Feifan Ma et autres
ABSTRACT V‐pits have been intensively studied for their role in light‐emitting diodes (LEDs). The coverage of V‐pits in InGaN/GaN multi‐quantum wells (MQWs) is critical for suppressing leakage path through electron blocking layer (EBL). In this study, we have investigated the coverage of …
cn, es
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