Milad Khajehvand

Structure-dependent diffusion at bonded Al/Al interfaces

Armin Shashaani, Milad Khajehvand, Panthea Sepehrband

Diffusion behavior at a bonding Al/Al interface formed through the jump-to-contact process is investigated using molecular dynamics simulations. The analysis introduces a new methodology for quantifying interface and grain boundary diffusion by extracting diffusivity from its spatial variation across the interface, thereby …

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Critical impact of experimentally-driven strut level anisotropic material models in advanced stress analysis of additively manufactured lattice structures

Subhadip Sahoo, Milad Khajehvand, Jason R. Mayeur, Kavan Hazeli

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Critical Impact of Experimentally-Driven Strut Level Anisotropic Material Models in Advanced Stress Analysis of Additively Manufactured Lattice Structures

Subhadip Sahoo, Milad Khajehvand, Jason R. Mayeur, Kavan Hazeli

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Bond-pad damage in ultrasonic wedge bonding

Milad Khajehvand, Henri Seppänen, Panthea Sepehrband

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Interface-mediated shear behavior of bonded aluminum substrates

Milad Khajehvand, Henri Seppänen, Panthea Sepehrband

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Nanoscale contact behavior of (1 1 1) fcc metallic surfaces

Milad Khajehvand, Henri Seppänen, Panthea Sepehrband

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The effect of crystallographic misorientation and interfacial separation on jump-to-contact behavior and defect generation in aluminum

Milad Khajehvand, Panthea Sepehrband

Abstract The jump-to-contact (JC) phenomenon for (111)-oriented surfaces in aluminum at room temperature is studied via molecular dynamics simulations. The effect of crystallographic misorientation and interfacial distance on the JC behavior and distribution of the resultant defects at the interface is investigated. …

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Crystal Misorietation and Defect Generation during Contact between Two Aluminum Substrates

Milad Khajehvand

With the use of molecular dynamics simulations, the nanoscale contact between two aluminum substrates at room temperature is studied. The so-called jump-to-contact (JC) phenomenon between (111) surfaces is observed to occur for interfacial distances below 5.8 ± 0.05 Å. This critical distance …