Ambipolarity Reduction and Upsurge in ION/IAmb Ratio of Traditional Tunnel FETs: An Extensive Comparative Review
Shwetapadma Panda, Devika Jena, Aruna Tripathy
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Shwetapadma Panda, Devika Jena, Aruna Tripathy
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C. K. Maiti, Sanghamitra Das, Devika Jena, D. Pradhan et autres
Strain engineering is a powerful tool for tuning optical and electronic properties in light-emitting diode (LED) structures. In 3D cylindrical LEDs, strain distribution becomes complex due to non-planar geometries, affecting carrier injection, emission efficiency, and device reliability. Strain engineering has emerged as …
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The incapability to lower the subthreshold swing (SS) to less than 60 mV/decade is a major obstacle to the scaling down of traditional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Because of its low SS (ON/IOFFswitching current ratio, the Tunnel Field Effect …
S Samundeeswari, J. Vandarkuzhali, M. L. Valarmathi, Devika Jena et autres
The pursuit of energy efficiency has become a cornerstone of sustainable development, as societies strive to mitigate the environmental impacts of energy production and consumption. Green technologies—ranging from clean energy systems such as photovoltaic, Aerodynamic, and Hydraulic power to energy-efficient appliances and …
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Rahul Dev Behera, Shiva Sahu, S. Hema Priyadarshini, Sanghamitra Biswal et autres
Finger Millet is a nutritional powerhouse as it contains many essential nutrients including iron, protein, calcium, dietary fibre, and carbohydrates. Since it's a gluten-free cereal, it has received attention for its impressive value in nutrition thus serving as a potential tool in …
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Devika Jena, Sanghamitra Das, Aruna Tripathy, Taraprasanna Dash
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E. Mohapatra, Sudeep Kumar Shetty, Sujatha Hiremath, Sanghamitra Das et autres
In this paper, we have reported low-power cache memory with DFT and scan chain techniques utilizing RTL to GDS (Register-Transfer Level to Graphic Design System) implementation in the Cadence Innovus tool using 45 nm technology. In the frontend design, the gate level …
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Taraprasanna Dash, J. Jena, Devika Jena, Κ. V. Subbarao et autres
This paper presents a comprehensive study on the mapping of stress and strain in FinFETs and explores its implications for device performance. The investigation focuses on the characterization of stress and strain distribution in three-dimensional FinFET structures using advanced modeling and simulation …
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Devika Jena, Ajit Kumar Sahu, Sanghamitra Das, N. K. Sahoo
The electron-optical properties like I-V characteristics, luminous power, power spectral density (PSD), and full-width half maxima (FWHM) of an InGaN/GaN multiple quantum well-based LED are analyzed using the Silvaco TCAD tool. It is shown that the anode voltage vs. anode current shows …
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Sanghamitra Das, Devika Jena, E. Mohapatra, Taraprasanna Dash et autres
Electronic devices made with wide band gap materials are useful for High-temperature applications. GaN and its alloys have proven to be the best choice for high-power microwave applications due to their superior material properties. The excellent thermal conductivity of GaN-based High Electron …
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Devika Jena, Sanghamitra Das, Choudhury Jayant Praharaj, Aruna Tripathy et autres
Abstract Strain engineering has proven to be a useful technique for enhancing the performance of many modern-day transistors. Stress engineering can also have a non-trivial effect on the performance of GaN HEMTs, which are devices of choice for high-power, high-frequency microwave applications. …
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Rahul Dev Behera, N. C. Barik, Sudhansu Sekhar Sahu, S. Biswal et autres
A field experiment was conducted at the farmer’s field of Bargarh district of Odisha in kharif, 2023 under the demonstration programme of Krishi Vigyan Kendra, Bargarh to study the “Effect of nutrient management practices on growth, yield and economics of cotton crop …
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