H. Wang

Failure Analysis–Informed Risk Assessment Framework for Geological Carbon Storage Using Numerical Simulation and Machine Learning

H. Wang, Hailun Ni, Tao Bai, Ting Xiao et autres

Summary Geological carbon storage (GCS) is recognized as a critical technology for achieving large-scale reductions in anthropogenic carbon dioxide (CO2) emissions. Ensuring long-term containment and safety requires robust risk assessment frameworks that account for geological uncertainty and identify potential failure scenarios. Among …

us (code pays fourni par la source)

Using a Well-Controlled Heterogeneous Permeability Field to Study Its Role on Miscible Density-Driven Convection in Porous Media and the Implications to Geological Carbon Sequestration

Ruichang Guo, Hanxing Sun, H. Wang, Zihao Li et autres

Summary In this work, we report on a new experimental method to construct well-controlled heterogeneous permeability fields to study miscible density-driven convection in quasi-2D porous media, which has implications for geological carbon sequestration (GCS) in saline aquifers. Dissolution trapping is a critical …

us (code pays fourni par la source)

A novel conditional generative model for efficient ensemble forecasts of state variables in large-scale geological carbon storage

Ming Fan, Yanfang Liu, Dan Lu, H. Wang et autres

us (code pays fourni par la source)

Comparative Assessment of U-Net-Based Deep Learning Models for Segmenting Microfractures and Pore Spaces in Digital Rocks

H. Wang, Ruichang Guo, Laura E. Dalton, Dustin Crandall et autres

Summary Segmentation of high-resolution X-ray microcomputed tomography (µCT) images is crucial in digital rock physics (DRP), affecting the characterization and analysis of microscale phenomena in the porous media. The complexity of geological structures and nonideal scanning conditions pose significant challenges to conventional …

us (code pays fourni par la source)

Wellbore Integrity and Sand Failure Mechanisms of Frac-Packed Wells in Unconsolidated Sand Formations

Jongsoo Hwang, H. Wang, Mukul M. Sharma

us (code pays fourni par la source)

STAR Collaboration

N.M. Abdelwahab, L. Adamczyk, J. K. Adkins, G. Agakishiev et autres

pl, us, ru, in, cz (code pays fourni par la source)

Understanding the nature of risks associated with onshore natural gas gathering pipelines

H. Wang, Ian Duncan

us (code pays fourni par la source)

Source-side barrier effects with very high-K dielectrics in 50 nm Si MOSFETs

D.L. Kencke, W. Chen, H. Wang, S. Mudanai et autres

High permittivity (K) gate insulators are projected for sub-100 nm Si MOSFETs since direct tunneling will likely limit SiO/sub 2/ thicknesses to 1.0-1.5 nm. High-K insulators avoid tunneling, but their larger physical thicknesses introduce subtle capacitive coupling phenomena such as fringing-induced barrier …

us (code pays fourni par la source)

The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory

D.L. Kencke, X. Wang, H. Wang, Q. Ouyang et autres

A multiple-stage simulation procedure identifies, for the first time, the location of secondary electrons that very efficiently produce gate currents in flash EEPROMs. The simulation method incorporates both electron and hole Monte Carlo analysis to calculate this secondary electron gate current without …

us (code pays fourni par la source)

Temperature characterization and modeling of electron and hole mobilities in MOS accumulation layers

S. Mudanai, G. Chindalore, W.-K. Shih, H. Wang et autres

The need to understand and predict MOS accumulation layer mobility has become increasingly important as MOS devices scale to the 100 nm gate length range. Indeed, the accumulation layer in the shallow source/drain extension in MOSFETs is becoming a significant part of …

us (code pays fourni par la source)

Tinkering with the well-tempered MOSFET: source–channel barrier modulation with high-permittivity dielectrics

D.L. Kencke, Q. Ouyang, W. Chen, H. Wang et autres

us (code pays fourni par la source)

Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

S.A. Hareland, M. Manassian, W.-K. Shih, S. Jallepalli et autres

In this paper, models appropriate for device simulators are developed which account for the quantum mechanical nature of accumulated regions. Accumulation layer quantization is important in deep submicron (/spl les/0.25 /spl mu/m) MOS devices in the overlapped source/drain extension regions, in accumulation …

us (code pays fourni par la source)