J. Wyss

Development and validation of a forward 0.7–4 MeV quasi-monoenergetic neutron capability at the CN Van de Graaff of LNL

J. Wyss, Pierfrancesco Mastinu, Elizabeth Musacchio González, Guido Martín Hernández et autres

Abstract The CN Van de Graaff accelerator of INFN-LNL provides forward-angle quasi-monoenergetic neutrons in the 0.7–4 MeV range via the 7 Li(p,n) 7 Be reaction on thin metallic lithium targets. This work describes the development and experimental validation of this forward neutron …

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Pixel response characterization of the ARCADIA fully depleted MAPS

Caterina Pantouvakis, Michele Rignanese, Todd Zenger, Sabrina Ciarlantini et autres

Abstract Monolithic Active Pixel Sensors (MAPS) achieved widespread use in several scientific applications, thanks to their properties, such as low material budget and high granularity. The ARCADIA INFN project developed a Fully-Depleted MAPS (FD-MAPS), using a modified LFoundry 110 nm CIS process. …

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Impact of front-end parameters of the ARCADIA MD3 on charged particle detection

C. Pantouvakis, S. Garbolino, Michele Rignanese, P. Affleck et autres

Abstract The ARCADIA INFN R&D project developed a Fully Depleted Monolithic Active Pixel Sensor (FD-MAPS) using a customized LFoundry 110 nm CIS process. The first in-beam characterization of the ARCADIA Main Demonstrator 3 (MD3) sensor with 200 µm active thickness has been …

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Burnout Susceptibility of Silicon Power Diodes When Exposed to 14-MeV Neutrons

G. Canale Parola, Simone Palazzo, G. Busatto, A. Sanseverino et autres

Neutrons can lead to significant failures in high-voltage power devices; this paper investigates the behavior of a silicon-power PiN diode when exposed to a 14 MeV neutron beam. We present a novel methodology that combines experimental characterization and numerical simulation to examine …

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Nuclear physics midterm plan in Italy: detector developments

Paolo Cardarelli, Roberto Catalano, M. Cavallaro, S. Corradetti et autres

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Fully Depleted MAPS in 110 nm CIS Technology for Particle Tracking and X-Ray Detection

Michele Rignanese, Chiara Bonini, Davide Chiappara, S. Ciarlantini et autres

ARCADIA (Advanced Readout CMOS Architectures with Depleted Integrated sensor Arrays) is a Fully Depleted Monolithic Active Pixel Sensor (FD-MAPS) developed by the INFN (Istituto Nazionale di Fisica Nucleare) collaboration. A technology demonstrators, designed using the LFoundry 110 nm CIS technology node, has …

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Study of a simplified CoolGal target to support the Phase-0 NEPIR facility

Elizabeth Musacchio González, A. Monetti, Pierfrancesco Mastinu, J. Wyss et autres

The NEPIR facility (NEutron and Proton Irradiation), currently in development at the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare (LNL-INFN), will serve as the first fast neutron ( E n > 1 MeV) irradiation source in Italy specifically …

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ARCADIA fully depleted CMOS MAPS development with LFoundry 110 nm CIS

M. Rolo, Attilio Andreazza, G. Ambrosi, F. Alfonsi et autres

Fully depleted CMOS sensors represent a significant step forward in radiation detection, combining the advantages of monolithic active pixel sensors with the enhanced signal collection efficiency of depleted bulk materials. The ARCADIA Collaboration established a technology platform for the development and production …

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Ion-Induced Charge and Single-Event Burnout in Silicon Power UMOSFETs

Saulo G. Alberton, Vitor A. P. Aguiar, N. Added, Alexis C. Vilas-Bôas et autres

The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in various applications due to its superior electrical performance. However, a detailed experimental comparison …

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Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs

Saulo G. Alberton, Alexis C. Vilas-Bôas, M. Guazzelli, Vitor A. P. Aguiar et autres

The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional vertical double-diffused MOSFET (DMOSFET) in many applications. Evaluating the reliability of UMOSFETs regarding neutron-induced radiation effects is crucial for understanding their response …

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On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments

Saulo G. Alberton, Alexis C. Vilas-Bôas, J. Wyss, Vitor A. P. Aguiar et autres

The vulnerability of prominent silicon-based U-shaped Metal-Oxide-Semiconductor Field Effect Transistors (UMOSFET) to destructive radiation effects when operating in terrestrial atmospheric environments is addressed. It is known that secondary particles from nuclear reactions between atmospheric neutrons and the constituent materials of electronic devices …

On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments

Saulo G. Alberton, Alexis C. Vilas-Bôas, J. Wyss, Vitor A. P. Aguiar et autres

The vulnerability of prominent silicon-based U-shaped Metal-Oxide-Semiconductor Field Effect Transistors (UMOSFETs) to destructive radiation effects when operating in terrestrial atmospheric environments is investigated. Secondary particles from nuclear reactions between atmospheric neutrons and the constituent materials of electronic devices can trigger Single-Event Burnout …

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