Stefan Dünkel

Charge-based in-memory computing using fabricated FeFET: device-system interaction

Mahdi Benkhelifa, Shubham Kumar, Ashik Chalakariyil, Zijian Zhao et autres

Abstract Utilizing the Ferroelectric FET (FeFET) technology as a capacitive element in charge-based in-memory computing (IMC) arrays offers multiple advantages over the classical current-based computing, such as reduced read disturbances and negligible static power. However, traditional variation sources and reliability concerns tied …

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New Insights into Multi-Level Cell Behavior in FeFET: Localization Effect Aware Write-Verify Scheme

Omkar Phadke, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer et autres

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Ferroelectric FET-based Reconfigurable Voltage-to-Time Converter in 28 nm CMOS

Hanaa Eqeiq, Jeries Mattar, Stefan Dünkel, Halid Mulaosmanovic et autres

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Ferroelectric Polarization Effect on Charge Trapping in HfO 2 FeFETs Examined via Random Telegraph Noise

Gilad Zilberman, Mor Mordechai Dahan, Emanuel Ber, Joël Kurzweil et autres

Understanding charge trapping mechanisms and characterizing oxide traps in hafnium oxide (HfO${}_{{2}}\text {)}$-based ferroelectric field-effect transistors (FeFETs) is essential for addressing long read-after-write (RAW) delays and limited endurance, two key challenges hindering their adoption. In this work, we employ random telegraph noise …

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Threshold Voltage Variability Induced by Localized Ferroelectric Phase Distributions in FeFET and Its Mitigation Strategies

Omkar Phadke, Minji Shon, Stuart E. Wodzro, Halid Mulaosmanovic et autres

Threshold voltage variability is a key concern in ferroelectric field effect transistor (FeFET) technology. In this work, a study spanning experiments, modeling, and SPICE simulations is conducted to evaluate the impact of localized FE/ dielectric (DE) distributions on the threshold voltage (${V}_{\text …

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A Reconfigurable Time-Domain In-Memory Computing Macro Using FeFET-Based CAM With Multilevel Delay Calibration in 28-nm CMOS

Jeries Mattar, Mor Mordechai Dahan, Stefan Dünkel, Halid Mulaosmanovic et autres

Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated and reconfigurable TD-nvIMC macro, fabricated in 28 nm CMOS, …

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Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

Sayma Nowshin Chowdhury, Alex L. Mazzoni, Xiaohang Zhang, Andreu Glasmann et autres

Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and inmemory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility. In this work, we experimentally demonstrate multi-bit operation of FeFET synapses integrated on GlobalFoundries' 28nm CMOS …

Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

Sayma Nowshin Chowdhury, Alex L. Mazzoni, X. Peter Zhang, Andreu Glasmann et autres

Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and in-memory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility. In this work, we experimentally demonstrate multi-bit operation of FeFET synapses integrated on GlobalFoundries’ 28nm CMOS …

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On the Localized Ferroelectric Phase Variation in Scaled FeFET: Experiments and Modeling

Omkar Phadke, Minji Shon, Stuart E. Wodzro, Halid Mulaosmanovic et autres

Phase variations in the ferroelectric thin films are the primary cause of the threshold voltage (VTH) variation in the Ferroelectric Field Effect Transistor (FeFET). In this work, the impact of "localized" ferroelectric/dielectric (FE/DE) phase variation on FeFET is evaluated. A new phenomenon, …

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Symbol Detection in a MIMO Wireless Communication System Using a FeFET-coupled CMOS Ring Oscillator Array

Harsh Kumar Jadia, Abhinaba Ghosh, Md Hanif Ali, N Sathish et autres

Symbol decoding in multiple-input multiple-output (MIMO) wireless communication systems requires the deployment of fast, energy-efficient computing hardware deployable at the edge. The brute-force, exact maximum likelihood (ML) decoder, solved on conventional classical digital hardware, has exponential time complexity. Approximate classical solvers implemented …

Temperature-Dependent Detrapping Behavior of p-/n-Type Ferroelectric FETs With Si/SiGe Channel

Shouzhuo Yang, Franz Müller, Yannick Raffel, Nandakishor Yadav et autres

The growing demand on new computer architectures, particularly in applications such as in-memory computing, may necessitate embedded non-volatile memories. Ferroelectric field-effect transistors offer both n-type and p-type functionality based on conventional CMOS technology. However, the issue of carrier (de)trapping, which shifts the …

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Ferroelectric Digital In-Memory Computing for Scalable, Reliable, and Efficient Similarity Computation

Anirban Kar, Albi Mema, Thorgund Nemec, Stefan Dünkel et autres

Classification-based learning in deep neural networks, particularly few-shot learning, demands efficient similarity metrics such as Hamming distance. Conventional architectures suffer from high energy overheads due to frequent data movement between memory and processing units, hindering scalability. In-memory computing addresses this by integrating …

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