2026
article
OpenAlex
Limei Li, Zhenshan Zheng, Xun Qian, Sijia Tan et autres
cn
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Weijie Lin, Yongda Chen, Jitao Zhang, Peiying Cai et autres
cn
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Yongda Chen, Weijie Lin, Peiying Cai, Jitao Zhang et autres
This paper presents a variable-gain low-noise amplifier (VGLNA) operating at 23 GHz using SMIC 65 nm CMOS technology. To achieve a wide gain tuning range while minimizing input/output impedance variations, a cross-summing architecture with main and auxiliary common source transistors is employed …
cn
(code pays fourni par la source)
2025
article
OpenAlex
Yuguang Bai, Yongda Chen, X. T. He, Sheng Zhang et autres
cn
(code pays fourni par la source)
Accès ouvert
2024
article
OpenAlex
Hongqiang Dou, Yongda Chen, Yongxin Sun, Chaoxu Guo
Recent advances have significantly enhanced dynamic early warning systems for rainfall-induced landslides by integrating rainfall thresholds with susceptibility mapping. However, there is still room for optimizing these models for regional-scale applications. This study introduces a dynamic early warning model in Anxi County, …
cn
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Peiying Cai, Tao Peng, Yongda Chen, Weijie Lin et autres
This paper presents a novel approach to realize a low phase noise ultra-wideband Voltage-Controlled Oscillator (VCO) using 65nm CMOS technology. The core circuit of the oscillator employs PMOS cross-coupled pairs to generate second harmonic signals, constituting the push-push structure. Transformer coupling technique …
cn
(code pays fourni par la source)
Accès ouvert
2023
article
OpenAlex
Ruxin Liu, Liang Si, Wei Niu, Xu Zhang et autres
Insulator–Metal Transition In article number 2211612, Zhicheng Zhong, Xuefeng Wang, and co-workers report that UV-light irradiation on perovskite-based heterostructures can drive the photocharge transfer from SrTiO3 substrates to intermediate-spin ferromagnetic SrRuO3 ultrathin films containing oxygen vacancies. As a consequence, a reversible Mott-insulator-to-metal …
cn, at, gb
(code pays fourni par la source)
2023
article
OpenAlex
Ruxin Liu, Liang Si, Wei Niu, Xu Zhang et autres
Abstract Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO3 has an itinerant ferromagnetism with a low‐spin state. However, the phase of intermediate‐spin (IS) ferromagnetic metallic state has never been seen. …
cn, at, gb
(code pays fourni par la source)
Accès ouvert
2022
conference-paper
OpenAlex
Yongda Chen, Yiyang Han, Yuan He, Jiaqi Xu
Over the past few decades, there have been more and more forms of product advertising, and the use of product advertising has also increased.Among this, picture advertising and video advertising have become the most common ways for marketers to promote.Consumers also tend …
gb, cn
(code pays fourni par la source)
2022
article
OpenAlex
Yongda Chen, Ruxin Liu, Xu Zhang, Wenzhuo Zhuang et autres
Spin-polarized two-dimensional electron gases (2DEGs) at the interfaces of SrTiO 3 -based correlated oxides have attracted tremendous attention in electronics and spintronics. Hitherto, the transition temperature ( T C ) for such spin polarization remains very low at around 20 K, seriously …
cn
(code pays fourni par la source)
2022
article
OpenAlex
Wei Niu, Zhenqi Wu, Yongda Chen, Yulin Gan et autres
The nontrivial Berry phase in correlated oxide heterostructures has been highly attractive due to the Rashba spin–orbit interactions originating from the inversion symmetry breaking at the heterointerfaces. Despite the theoretically predicated nontrivial π Berry phase in Rashba systems, its experimental detection among …
cn
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2022
article
OpenAlex
Yongda Chen, Xiao Yuan, Siqi Shan, Chong Zhang et autres
Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective …
cn
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