Daniel J. Pennachio

Investigation of Freestanding Macroscopic SiO2/ZnO:Al Nanocomposites Grown by Atomic Layer Deposition and Environmentally Controlled Pressure-Assisted Sintering

Zoey Warecki, Kevin Anderson, B. Greenberg, Todd Brintlinger et autres

Nanocomposites formed by atomic layer deposition (ALD) infiltration of nanoparticle networks have several advantages including ultrahigh interfacial area, compositional control via the number of ALD cycles, and a composition-independent bicontinuous structure that creates two interpenetrating networks – one formed by the nanoparticles …

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Bottom-Up Fabrication of Bicontinuous Bulk Nanocomposites for Optical and Electronic Applications

Kevin Anderson, B. Greenberg, Zoey Warecki, Todd Brintlinger et autres

Fabrication of bulk nanocomposite solids with macroscopic form factor and nanoscopic structural control is a central challenge in nanomaterials engineering. This work introduces an approach to this challenge wherein precise nanostructural control is provided by ultrahigh-aspect-ratio atomic layer deposition and complete densification …

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Wafer scale characterization of bulk AlN substrates and homoepitaxial growth

Alan G. Jacobs, Katie R. Gann, Emma Rocco, Daniel J. Pennachio et autres

Aluminum nitride (AlN) is well suited to address evolving needs of future power systems for increased density, efficiency, and voltage handling. Eventual commercialization of power devices requires maturation of substrate technology to ensure fabrication of consistent devices impacted by the spatial distribution …

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Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3

Hannah N. Masten, James Spencer Lundh, Daniel J. Pennachio, Ming-Hsun Lee et autres

In this work, we demonstrate device fabrication and characterization of ultrawide bandgap (UWBG) β-(AlxGa1−x)2O3 channel metal–semiconductor field-effect transistors (MESFETs) with Si-implanted source/drain contacts. Films of Si-doped β-(AlxGa1−x)2O3 and unintentionally doped (UID) β-Ga2O3 were grown on an Fe-doped (010) β-Ga2O3 substrate using close-injection …

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Epitaxial Cr2MnO4 p–n heterojunction to (2¯01) β-Ga2O3 deposited via off-axis magnetron sputtering

Babajide Akintunde, Naomi Derksen, Ashik Imran, James C. Gallagher et autres

We report the heteroepitaxial growth of spinel Cr2MnO4 thin films on (2¯01) β-Ga2O3 substrates via off-axis RF magnetron sputtering. Structural analysis confirms (111)-oriented epitaxial films with optimized growth at 950 °C. Fabricated Cr2MnO4/β-Ga2O3 vertical diodes exhibit rectifying behavior with high on/off ratios …

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Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration

James Spencer Lundh, Brianna Klein, Tatyana I. Feygelson, Daniel J. Pennachio et autres

We report back-end-of-line growth of nanocrystalline diamond (NCD) on ultrawide bandgap (UWBG) high Al content aluminum gallium nitride (AlGaN) channel high electron mobility transistors for thermal management. A thin (∼15 nm) silicon nitride (SiNx) interlayer was deposited to protect the device surface …

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Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 4

James Spencer Lundh, Brianna Klein, Andrew A. Allerman, Alfred Zhao et autres

We report 850 °C operation of ultrawide bandgap (UWBG) Al-rich Al0.68Ga0.32N channel high electron mobility transistors (HEMTs) at atmospheric pressure in nitrogen ambient. Temperature dependent DC electrical characteristics were measured in situ up to 850 °C, after exposure to 850 °C for …

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Exploring SiC CVD growth parameters compatible with remote epitaxy

Daniel J. Pennachio, Jenifer R. Hajzus, Rachael L. Myers‐Ward

Remote epitaxy (RE) is a promising technique where monolayers of van der Waals-bonded (i.e., 2D) material act as a release layer for epitaxial film removal and substrate reuse. Epitaxial graphene (EG) grown in situ on SiC(0001) is an ideal RE substrate as …

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(Invited) Mitigation of BPD Faulting Using H2 Etches for Pulsed Power Applications

Rachael L. Myers‐Ward, Nadeemullah A. Mahadik, Michael E. Liao, Geoffrey M. Foster et autres

Basal plane dislocations (BPDs) have been a concern for SiC high-voltage bipolar devices for many years as they source Shockley-type stacking faults in the presence of an electron-hole plasma and reduce minority carrier lifetimes [1]. There has been much focus on the …

Emission current enhancement from quasi-freestanding epitaxial graphene microstructure electron emitters through surface layered silicon dioxide

Daniel Lewis, Jason Swart, Michael Pedowitz, Jennifer DeMell et autres

Abstract Enhanced electron emission from oxide-encapsulated quasi-freestanding bilayer epitaxial graphene devices is reported, including one emission current of 9.4 µA and successful emission even with oxide thicknesses of up to 1.25 µm. The low operating temperature (215 °C), and applied electric fields …

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Reduced temperature in lateral (Al x Ga1− x )2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Hannah N. Masten, James Spencer Lundh, Tatyana I. Feygelson, Kohei Sasaki et autres

The low thermal conductivity of β-Ga2O3 is a significant concern for maximizing the potential of this ultra-wide bandgap semiconductor as a power switching device technology. Here, we report on the use of nanocrystalline diamond (NCD) deposited via microwave plasma enhanced chemical vapor …

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Magnetic sensing with silicon vacancies in isotopically purified 4H-SiC

Ignas Lekavicius, Samuel Carter, Rachael L. Myers‐Ward, Samuel T. White et autres

The silicon vacancy center in 4H-SiC is an optically active defect with spin transitions that can be initialized and read out at room temperature. The sensitivities of room temperature magnetometers using these defects have been limited by decoherence due to a magnetically …

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