Goki Eda

Electrical control of induced magnetism in an air-stable two-dimensional semiconductor

Qi Zhang, Mithun Ghosh, Yaroslav Zhumagulov, Oldřich Cicvárek et autres

Dilute magnetic semiconductors (DMSs) provide a platform for electrically controlling spin interactions; however, conventional systems face limited gate tunability and structural disorder. Here, we demonstrate gate-switchable magnetism in air-stable, dilute Fe-doped PtSe 2 , a two-dimensional (2D) DMS that remains structurally homogeneous …

sg, ch, cz, de (code pays fourni par la source)

Point-like photovoltaic junction in 2D semiconductor homobilayer

Nam Thanh Trung Vu, Mingjun Chen, Yi Wei Ho, Qingyun Wu et autres

sg, jp (code pays fourni par la source)

Broadband Quantum Rectification and Mixing Via the Nonlinear Transport in PtTe2

Fanrui Hu, Jiayu Lei, Hanbum Park, Fei Wang et autres

The rapid growth of Internet of Things, 6G communication, and millimeter wave systems demands broadband rectifiers and mixers. The nonlinear Hall effect (NLHE) provides a junction-free route for broadband signal processing, overcoming high-frequency limitations associated with threshold voltages and junction capacitance in …

sg, nl (code pays fourni par la source)

Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr2Ge2Te6/WTe2 van der Waals Heterobilayers

Franz Herling, Mireia Torres-Sala, Dorye L. Esteras, Charlotte Evason et autres

Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement of ferromagnetism in Cr2Ge2Te6 (CGT). Magnetotransport measurements across multiple devices with …

Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr 2 Ge 2 Te 6 /WTe 2 van der Waals Heterobilayers

Franz Herling, Mireia Torres-Sala, Dorye L. Esteras, Charlotte Evason et autres

thicknesses ranging from monolayer to bulk reveal a robust anomalous Hall effect together with a more than two fold increase of the Curie temperature and substantially enhanced coercive fields. Interface microscopy confirms chemically abrupt vdW interfaces with no detectable interdiffusion, while control …

es, jp, us, bg, sg, cn (code pays fourni par la source)

CSD 2231644: Experimental Crystal Structure Determination

Ibrahim Abdelwahab, Benjamin Tilmann, Xiaoxu Zhao, Ivan Verzhbitskiy et autres

An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the joint CCDC and FIZ Karlsruhe Access …

CSD 2231643: Experimental Crystal Structure Determination

Ibrahim Abdelwahab, Benjamin Tilmann, Xiaoxu Zhao, Ivan Verzhbitskiy et autres

An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the joint CCDC and FIZ Karlsruhe Access …

Electrical Transport of Nb‐Doped MoS 2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz et autres

ABSTRACT 2D transition metal dichalcogenides (TMDCs) are promising candidates for next‐generation nanoelectronics and optoelectronics. Yet, controlling layer number, stacking angle, and interfacial quality in van der Waals (vdW) heterostructures remains challenging, often limiting device performance and reproducibility. Homojunctions formed within a single …

cz, kr, de, pl, sg (code pays fourni par la source)

Hopping conduction in quasi-1D titanium trisulfide layered nanoribbons

Abhishek Mishra, Ivan Verzhbitskiy, Rainer Lee, Aleksandr S. Rodin et autres

Quasi-one-dimensional (quasi-1D) layered nanoribbons (NRs) are being extensively investigated for their potential applications in next-generation nanoelectronics and optoelectronics. Understanding electrical conduction in such NRs is essential for designing the devices. In this work, we provide insights into hopping conduction mechanisms in NR …

sg (code pays fourni par la source)

Ultrabroadband nonlinear Hall rectifier using SnTe

Fanrui Hu, Pengnan Zhao, Shishun Zhao, Jiayu Lei et autres

sg, cn, mo, in, Rwanda (code pays fourni par la source)

Effect of Substrate on Sulfur Vacancy Defect-Mediated Photoluminescence in Two-Dimensional MoS2

Yiru Zhu, Zhepeng Zhang, Ye Wang, Soumya Sarkar et autres

High Resolution Image Download MS PowerPoint Slide Chalcogen vacancy defects in monolayer transition metal dichalcogenides form in-gap states that can trap excitons, leading to defect-mediated photoluminescence (PL) emission. Here, we show that room-temperature (RT, 300 K) PL from sulfur vacancies in defective …

gb, sg, fr (code pays fourni par la source)

Tunable Ultrastrong Magnon–Magnon Coupling Approaching the Deep-Strong Regime in a van der Waals Antiferromagnet

C. W. F. Freeman, Harry Youel, Adam Krzysztof Budniak, Zekun Xue et autres

Antiferromagnetic (AFM) magnons in van der Waals (vdW) materials offer substantial potential for applications in magnonics and spintronics. In this study, we demonstrate ultrastrong magnon-magnon coupling in the GHz regime within a vdW AFM, achieving a maximum coupling rate of 0.91. Our …

gb, sg, cn, jp (code pays fourni par la source)