Accès ouvert
2026
article
OpenAlex
Soumya Sarkar, Sergio Alvarruiz, Zhiren He, Ahmet Avşar et autres
Abstract Nonvolatile control of electron spin using electric polarization offers a promising route toward energy-efficient spintronic devices. Early studies of conventional ferroelectrics, from GeTe to perovskite oxides, demonstrated that polarization switching can reversibly control spin textures and spin-to-charge conversion (SCC) in nonmagnetic …
gb, nl, sg, it
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Accès ouvert
2026
book
OpenAlex
Soumya Sarkar, Dimitra G. Georgiadou, David Barrie Thomas, Vahid Yazdanpanah
Accès ouvert
2026
article
OpenAlex
Syeda Ramsha Ali, Yueyu Guo, Soumya Sarkar, K. De Groot et autres
Physical unclonable functions (PUFs) based on nanophotonic materials offer a promising route toward secure and tamper-resistant authentication. Here, we introduce a quantum dots (QDs)-driven optical fingerprinting (identifier) platform that utilizes four distinct photoluminescence (PL) emission peaks generated from two cadmium-free CIS/ZnS QDs …
gb
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Accès ouvert
2026
article
OpenAlex
Pinaki Sensarma, Soumya Sarkar, Ujjwala Gupta, Jitumoni Rajkonwar et autres
Background: A marginal farmer’s income is inadequate to sustain a decent living. Hence, they work in brick fields or similar jobs during the lean season, which generates respirable dust containing silica. Lungs are sensitised. Lung already sensitised to crystalline silica, and the …
in
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2025
article
OpenAlex
Md. S. Biswas, Soumya Sarkar
in
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Accès ouvert
2025
article
OpenAlex
Soumya Sarkar, Pinaki Sensarma, Jitumoni Rajkonwar, Samit Kumar Carr
Ramming mass has 95-99% silica content. It is produced by crushing boulders. These boulders are mined mainly in the West Bardhhaman, West Bengal; Chot Nagpur plateau of Jharkhand, during crushing, producing granules of various sizes in special crushing units. These granules are …
in
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Accès ouvert
2025
article
OpenAlex
Soumya Sarkar, Deep Jariwala
Abstract Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying current–voltage hysteretic characteristics that enable self-selecting designs critical for high-density memory. We examine …
gb, cn, hk, us
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Accès ouvert
2025
preprint
OpenAlex
Kamal Kumar Paul, Cullen Chosy, Soumya Sarkar, Zhuangnan Li et autres
Layered transition metal dichalcogenide semiconductors are interesting for photovoltaics owing to their high solar absorbance and efficient carrier diffusion. Tungsten diselenide (WSe$_2$), in particular, has emerged as a promising solar cell absorber. However, defective metal-semiconductor interfaces have restricted the power conversion efficiency …
Accès ouvert
2025
preprint
OpenAlex
Ziwei Jeffrey Yang, Zhuangnan Li, James Moloney, Leyi Loh et autres
Metallic monolayered [or two - dimensional (2D)] MoS2 nanosheets show tremendous promise for energy storage and catalysis applications. However, state-of-the-art chemical exfoliation methods require > 48 hours to produce milligrams of metallic 2D MoS2. Further, chemically exfoliated MoS2 nanosheets are a mixture …
Accès ouvert
2025
article
OpenAlex
Yiru Zhu, Zhepeng Zhang, Ye Wang, Soumya Sarkar et autres
High Resolution Image Download MS PowerPoint Slide Chalcogen vacancy defects in monolayer transition metal dichalcogenides form in-gap states that can trap excitons, leading to defect-mediated photoluminescence (PL) emission. Here, we show that room-temperature (RT, 300 K) PL from sulfur vacancies in defective …
gb, sg, fr
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Accès ouvert
2025
preprint
OpenAlex
Soumya Sarkar, Deep Jariwala
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying current-voltage hysteretic characteristics that enable self-selecting designs critical for high-density memory. We examine progress …
Accès ouvert
2025
article
OpenAlex
Soumya Sarkar, Saeyoung Oh, Peter Newton, Yang Li et autres
Graphene-based spintronic devices require efficient spin injection, and dielectric tunnel barriers are typically used to facilitate spin injection. However, the direct growth of ultrathin dielectrics on two-dimensional surfaces is challenging and unreliable. Here we report spin injection in graphene lateral spin valves …
gb, kr
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