Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
Hideyuki Itakura, Toshihumi Nomura, Naoki Arita, Narihito Okada et autres
The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is …
us, jp (code pays fourni par la source)