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Profil bibliographique

Toshihumi Nomura

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

3Publications signalées
16Citations signalées
2Affiliations récentes

Les institutions déclarées

Les domaines associés

GaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesZnO doping and propertiesAcoustic Wave Resonator TechnologiesOcular Diseases and Behçet’s Syndrome

Les publications récentes

Accès ouvert 2020 article OpenAlex

Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT

Hideyuki Itakura, Toshihumi Nomura, Naoki Arita, Narihito Okada et autres

The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is …

us, jp (code pays fourni par la source)

11 citations AIP Advances
Accès ouvert 2016 article OpenAlex

A Case of Severe Panuveitis Associated with Psoriasis Vulgaris Successfully Treated with Infliximab

Yuri Sakurai, Kenichi Namba, Kazuomi Mizuuchi, Toshihumi Nomura et autres

PURPOSE: Uveitis associated with psoriasis vulgaris is usually seen as an anterior segment inflammation, and it is very rare that the inflammation extends to the posterior segment. We herein report a case of severe panuveitis associated with psoriasis vulgaris presenting as retinal …

jp, us (code pays fourni par la source)

5 citations Case Reports in Ophthalmology

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