Danilo D. Simone

A High-Resolution EUV Zinc-Oximate Resist: Why Post-exposure Bake Fails to Improve Lithography Performance

Ying-Lin Chen, Fabian Holzmeier, Roberto Fallica, Tan Manuel Marcello Nathanael et autres

Zinc oximates─organometallic compounds combining zinc and oximate ligands─were previously used as precursors for zinc-oxide-based thin-film transistor applications. Recently, the potential of zinc oximates as high-resolution patterning materials was evaluated via electron beam lithography and extreme ultraviolet (EUV) lithography (EUVL). However, a detailed …

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A High-Resolution EUV Zinc-Oximate Resist: Why Post-exposure Bake Fails to Improve Lithography Performance

Ying-Lin Chen, Fabian Holzmeier, Roberto Fallica, Tan Manuel Marcello Nathanael et autres

Zinc oximates─organometallic compounds combining zinc and oximate ligands─were previously used as precursors for zinc-oxide-based thin-film transistor applications. Recently, the potential of zinc oximates as high-resolution patterning materials was evaluated via electron beam lithography and extreme ultraviolet (EUV) lithography (EUVL). However, a detailed …

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Stochastic defectivity on via layer in 0.55 NA EUVL

John J. Biafore, Mircea V. Dusa, Danilo D. Simone, Mark D. Smith et autres

Euler–Bernoulli bending theory applied to high NA EUV dense line-space patterning to characterize the line wiggling

Danilo D. Simone, Gian Francesco Lorusso

Background Dimensional scaling of line features can lead to line wiggling after development and after the etching process step. The line wiggle (WGL) phenomenon is strongly influenced by the process conditions and by the film stack, due to both thickness and stiffness …

Euler–Bernoulli bending theory applied to high NA EUV dense line-space patterning to characterize the line wiggling

Danilo D. Simone, Gian Francesco Lorusso

Background Dimensional scaling of line features can lead to line wiggling after development and after the etching process step. The line wiggle (WGL) phenomenon is strongly influenced by the process conditions and by the film stack, due to both thickness and stiffness …

Fundamental understanding of exposure and process chemistry of Sn-based metal oxide resists: effects of ambient environment during post-exposure delay and bake

Ivan K. Pollentier, Fabian Holzmeier, Roberto Fallica, Ying-Lin Chen et autres

Metal oxide resists (MORs) have shown great promise for high-resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high-volume manufacturing. However, MORs have recently been shown to exhibit sensitivity to process conditions and environment, leading to critical dimension (CD) …

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Fundamental understanding of exposure and process chemistry of Sn-based metal oxide resists: effects of ambient environment during post-exposure delay and bake

Ivan K. Pollentier, Fabian Holzmeier, Roberto Fallica, Ying-Lin Chen et autres

Metal oxide resists (MORs) have shown great promise for high-resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high-volume manufacturing. However, MORs have recently been shown to exhibit sensitivity to process conditions and environment, leading to critical dimension (CD) …

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Fundamental understanding of exposure and process chemistry of Sn-based metal oxide resists: effects of ambient environment during post-exposure delay and bake

Ivan K. Pollentier, Fabian Holzmeier, Roberto Fallica, Ying-Lin Chen et autres

Metal oxide resists (MORs) have shown great promise for high-resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high-volume manufacturing. However, MORs have recently been shown to exhibit sensitivity to process conditions and environment, leading to critical dimension (CD) …

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Process and materials compatibility considerations for introducing novel extreme ultraviolet resists in a fab: a guide for academia and entrepreneurs

Bilal Abbas Naqvi, Fabian Holzmeier, Ivan Mađarević, Danilo D. Simone et autres

Extreme ultraviolet (EUV) lithography is critical for manufacturing chips at the most advanced technology nodes. Like every new technology, EUV lithography has challenges of its own. One of the major challenges is developing a suitable EUV photoresist. Efforts are being made to …

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Understanding the impact of the EUV photon absorption distribution in a patterned EUV resist and its lithographic performance

Danilo D. Simone, Vicky Philipsen, Alessandro Vaglio Pret, Anatoly Burov

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Advances of dry resist towards next-generation lines-spaces patterning in high-NA EUV lithography

Ali Haider, Zhengtao Chen, Shruti Jambaldinni, Anuja De Silva et autres

In this work, we demonstrate the performance of LAM dry resist for pitch 18nm (P18) dense L/S at 0.55 NA, addressing key challenges such as line wiggling, depth of focus (DOF), and defectivity. Through the co-optimization of dry resist, underlayer, post-exposure bake …

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Impact of pixel size on unbiased roughness measurements of lines and spaces

Chris A. Mack, Mohamed Zidan, Danilo D. Simone, Stefan De Gendt et autres

BackgroundMeasuring and subtracting SEM noise from a biased measurement of roughness leads to an unbiased roughness measurement. Biased roughness values are strongly influenced by the pixel size of the image due to both sampling effects and sample damage or charging.AimIt is important …

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