Sheik Ansar Usman Ibrahim

A high-flow 2nm nylon membrane filter for next-generation lithography applications

Muguo Chen, Eric Shiu, Junqi Ding, James Shull et autres

A point of use filter with new pleats design for lithography applications

Hirokazu Sakakibara, Kenji Ebara, Ozal Yusuf, Sheik Ansar Usman Ibrahim et autres

Point of use filter (POU) has been applied in various applications to remove particle, gels and metal etc. existing in each chemical. Filter start-up performance and particle removal efficiency are key performance metrics for POU, as these metrics can suppress chemical volume …

jp (code pays fourni par la source)

Defectivity reduction in EUV resists through novel high-performance Point-Of-Use (POU) filters

Yiren Zhang, Toru Umeda, Hirokazu Sakakibara, Sheik Ansar Usman Ibrahim et autres

Filters for Extreme Ultra-Violet (EUV) lithography chemicals, like chemically amplified photoresist (CAR), are attractive because of their capabilities to remove aggregated species and reduce microbridges in high volume manufacturing. Unlike bulk filters used in high-flow circulation mode, point-of-use (POU) filter is used …

us, jp, be (code pays fourni par la source)

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve G. Teugels, Patrick Ong et autres

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an LGof 60 nm an extrinsic gmof 1030 μS/μm at Vds= 0.5 V is achieved which is a 1.75× increase compared with the replacement …

be (code pays fourni par la source)