Zhiwei Huang

Novel bimodal response in self-powered Ge photodetectors enables waveform-encrypted physical-layer security communication

Ge Yongkang, Zhiwei Huang, Meihua Yang, Fang Jinhong et autres

In Situ Selenization‐Engineered PtSe 2 /PdSe 2 Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission

Shengyan Zu, Meili Ge, Xiaohuan Wei, Zikai Lin et autres

Abstract This work proposes a synergistic thickness engineering and interface optimization strategy to achieve the controllable fabrication of high‐performance PtSe 2 /PdSe 2 van der Waals heterostructure photodetectors. Precise control over the PtSe 2 layer thickness, which is achieved at target values …

cn (code pays fourni par la source)

Grain Welding Strategy Suppressing Chemomechanical Failure in Polycrystalline Cathode for High‐Voltage Fast‐Charging Sodium‐Ion Batteries

Bo Peng, Xing Huang, Chengrong Xu, Zhiwei Huang et autres

Abstract Chemomechanical failure is critical bottleneck for Na‐based layered oxides (especially polycrystalline material) to achieve the stable operating at high‐voltage with fast‐charging ability. Although attempts like coating and doping are presented to alleviate this issue, the inherent intergranular crevices are inevitable during …

cn (code pays fourni par la source)

In Situ Selenized Back‐to‐Back WSe 2 /W/Ge Dual Schottky Heterojunction for Broadband High‐Speed Polarization‐Encoded Communication

Xiaojia Xu, Shengyan Zu, Meili Ge, Xiaohuan Wei et autres

ABSTRACT Mixed‐dimensional van der Waals heterostructures comprising 2D transition metal dichalcogenides (TMDs) and 3D semiconductors show great promise for short‐wave infrared (SWIR) photodetection. In this study, breaking through the limitations of traditional thin‐film transfer processes, the in situ fabrication of WSe 2 …

cn (code pays fourni par la source)

Polarization‐Encoded Transmission Enabled by PtSe 2 /Si PIN Photodetectors with Circular Groove Light‐Trapping Architecture

Meili Ge, Shaoqiu Ke, Shengyan Zu, Xiaohuan Wei et autres

Abstract 2D PtSe 2 shows promise for extending Si photodetection to the short‐wave infrared (SWIR) but faces integration challenges. A high‐performance PtSe 2 /I‐Si/N + ‐Si PIN photodetector on Si circular groove light‐trapping structures is demonstrated. Using in situ selenization and a …

cn (code pays fourni par la source)

High-vacuum Ar plasma-activated in-situ wafer bonding for low-dislocation-density Ge-on-SOI heterojunction with microcrystalline Ge interlayer

Xiaolong Jiang, Menghui Guo, Xindi Zhang, Zikai Lin et autres

cn (code pays fourni par la source)

Selenization Growth Mechanism of PdSe 2 Nanoscale-Thick Films in Large-Diameter Quartz Tube and PdSe 2 /Si 2D-3D PIN-like Photodetectors

Zhiming Li, Xiaojia Xu, Meili Ge, Yiliang Chen et autres

In this study, we innovatively discovered the influence of Se vapor concentration on film formation during selenization via the TAC method, revealing the quantitative regulation mechanism of Se vapor concentration within large-diameter quartz tubes on the growth mode of PdSe 2 nanoscale-thick …

cn, us (code pays fourni par la source)

Broadband (300–2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applications

Yongkang Ge, Meihua Yang, Junfeng Yang, Xiaolong Jiang et autres

This work presents a near-infrared (NIR) Schottky photodetector based on an ITO/Au nanoparticles (NPs)/Al2O3/Silicon (Si) architecture, exhibiting exceptional dark current suppression (0.4 nA at −2 V) and a broadband photodetection spanning ultraviolet to extended NIR wavelengths (300–2200 nm). The integration of an …

cn (code pays fourni par la source)

In Situ Selenization Engineered Dual Schottky Heterojunctions: A Novel Architecture for High‐Speed Broadband Photonic Communication Detector Arrays

Shaoying Ke, Meili Ge, Shengyan Zu, Xiaohuan Wei et autres

Abstract 2D transition metal dichalcogenide WSe 2 exhibits unique band structure tunability, and its van der Waals heterostructures with 3D semiconductors demonstrate significant potential for high‐performance photodetection. However, inherent limitations (interface defects) in conventional thin‐film transfer hinder their development. This study addresses …

cn (code pays fourni par la source)

Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared Imaging

Bin Liu, Yiliang Chen, Meili Ge, Xiaohuan Wei et autres

The integration of quantum-confined nanostructures with two-dimensional (2D) and three-dimensional (3D) materials presents a promising avenue for advancing optoelectronic devices, yet achieving synergistic enhancement in broadband detection, self-powered operation, and ultrafast response remains challenging. Here, a novel 0D/2D/3D heterostructure photodetector is demonstrated …

us, cn (code pays fourni par la source)

300–2200 nm Broadband Si Schottky Photodetectors With Ultra-Low Dark Current (<10 nA/cm 2 ) via Al 2 O 3 /SiO x Interface Engineering

Yongkang Ge, Zhiwei Huang, Meihua Yang, Shaoqiu Ke et autres

This study demonstrates a silicon (Si)-based nearinfrared (NIR) photodetector achieving ultralow dark current density (7.5×10-9A/cm2at -2 V) and ultrawide wavelength photoresponse (300-2200 nm) through an engineered ITO/Al2O3/SiOx/n-Si Schottky photodetector. By integrating an Al2O3/SiOx bilayer interface, the Schottky barrier height (SBH) of this …

cn (code pays fourni par la source)

532–2200 nm Si Schottky Photodetectors Featuring Nonuniform Barrier Layers

Yongkang Ge, Zhiwei Huang, Meihua Yang, Xiaolong Jiang et autres

The internal photoemission (IPE) effect in silicon (Si) Schottky photodetectors offers a promising route to overcome the inherent bandgap limitation of Si and achieve efficient near-infrared (NIR) optical detection. However, conventional Si Schottky photodetectors, characterized by uniform Schottky barrier layers, exhibit restricted …

cn (code pays fourni par la source)