Stephen John McDonnell

Robust Antiferroelectric Response in the Pbca Phase of Hafnium Zirconium Oxide via Aluminum Substitution

Yong Kyu Choi, Min‐Chul Kang, Tinsae Alem, Nicolas K. Lam et autres

ABSTRACT Hafnium zirconium oxide (HZO) has attracted attention for applications in nonvolatile memory and energy harvesting devices. However, it faces practical challenges such as insufficient endurance. One promising strategy to address this limitation is the utilization of antiferroelectric (AFE) behavior in HZO‐based …

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Cu and Cu‐30Ni Alloy as Anti‐Viral Materials for High‐Touch Surfaces: Efficacy in a Simulated Public Environment with Frequent Cleaning Practices

Valentin Romanovski, Елена Владимировна Романовская, Victor Wallemacq, Carol Frances Glover et autres

Abstract This paper assesses whether copper surfaces retain their anti‐viral efficacy, or whether this property is altered by exposure to the cleaning solutions of glutaraldehyde or NaClO, when used in high‐touch surfaces that are regularly touched by many people. The results obtained …

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Properties of Electrodeposited Molybdenum Disulfide on Zinc Oxide and Zinc Oxide/Zinc Sulfide Nanowires

Lee Kendall, Dawn Ford, Giovanni Zangari, Stephen John McDonnell

Abstract Molybdenum sulfide (MoS 2 ) has attracted significant attention as a non-platinum group electrocatalyst for the hydrogen evolution reaction (HER). Due to the increased activity of the edge sites relative to the basal plane, significant efforts have been made to increase …

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Environmental Control of Ferroelectricity in Hafnia Films

Waseem Ahmad Wani, Nicolas K. Lam, Kristina M. Holsgrove, Gerald Bejger et autres

Abstract Ferroelectricity in hafnia films has triggered significant research interest over the past decade due to its immense promise for next‐generation memory devices. However, the origin of ferroic behavior at the nanoscale and the means to control it remain an open question, …

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Process temperature dependence of sputtered MgO/n-type GaN metal–oxide–semiconductor capacitors

Liron Shvilberg, Haotian Xue, Elia Palmese, Helge H. Heinrich et autres

The temperature dependence of epitaxial growth of MgO on n-type (0001)-oriented GaN by radio frequency magnetron sputtering is investigated. Epitaxial growth is obtained for growth temperatures of 550 °C and above, but polycrystalline films are observed for 500 °C and below. For …

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Effect of Precursor Purge Time on Plasma-Enhanced Atomic Layer Deposition-Prepared Ferroelectric Hf 0.5 Zr 0.5 O 2 Phase and Performance

Yong Kyu Choi, Kristina M. Holsgrove, Andrea M. Watson, Benjamin L. Aronson et autres

High Resolution Image Download MS PowerPoint Slide Hafnium oxide-based thin films, in particular hafnium zirconium oxide (HZO), have potential for applications in nonvolatile memory and energy harvesting. Atomic layer deposition (ALD) is the most widely used method for HZO deposition due to …

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Electrodeposition of amorphous molybdenum sulfo-selenide as a low-cost catalyst

Lee Kendall, Giovanni Zangari, Stephen John McDonnell

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Electrodeposition of amorphous molybdenum sulfo-selenide as a low-cost catalyst

Lee Kendall, Giovanni Zangari, Stephen John McDonnell

Overall, the MoSx system has shown greater catalytic activity over the traditional MoS2 based systems due to the absence of discrete basal plane, and differing structural arrangements. This increases the overall catalytic site density alongside adequate electronic conductivity from short-range atomic arrangements …

Integration of WSe2 with gate dielectrics: synthesis and interfaces

Stephen John McDonnell, Maria Gabriela Sales, Sina Najmaei, Wendy L. Sarney et autres

The integration of any new material into device architectures necessarily requires interfaces with dissimilar materials. In the case of semiconducting transition metal dichalcogenide (TMDCs) WSe2 the interface with a gate dielectric is extremely important. Presented will be our work on two approaches …

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Effects of atmospheric UV-O3 exposure of WSe2 on the properties of the HfO2/WSe2 interface

Maria Gabriela Sales, A. Mazzoni, Wendy L. Sarney, Asher Calvin Leff et autres

Transition metal dichalcogenides (TMDCs), such as semiconducting WSe2, are typically interfaced with a high-quality dielectric layer in device applications. The unreactive basal plane of TMDCs makes the standard technique for deposition of dielectric oxides, atomic layer deposition (ALD), challenging on TMDC surfaces. …

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Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices

Wendy L. Sarney, Andreu Glasmann, Justin S. Pearson, Christine K. McGinn et autres

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The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

Peter M. Litwin, Samantha T. Jaszewski, Wendy L. Sarney, Asher Calvin Leff et autres

We report on the synthesis of self-intercalated Nb1+xSe2 thin films by molecular beam epitaxy. Nb1+xSe2 is a metal-rich phase of NbSe2 where additional Nb atoms populate the van der Waals gap. The grown thin films are studied as a function of the …

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