M. Weyers

Influence of the Epitaxial Growth Conditions of the Active Region on the Performance of Far‐Ultraviolet‐C Light‐Emitting Diodes

Tim Kolbe, Sylvia Hagedorn, Jens Rass, Hyun Kyong Cho et autres

Far‐ultraviolet‐C (far‐UVC) light‐emitting diodes (LEDs) emitting at emission wavelengths of 226 or 233 nm with active regions epitaxially grown under different conditions are compared regarding their emission power, operation voltage, and lifetime. A variation in the V/III ratio at the same growth …

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MOVPE growth and characterization of AlPN layers for HFETs

Eberhard Richter, Frank Brunner, S. Hagedorn, C. Netzel et autres

A Heterogeneous 200 mm Silicon Nitride Photonics Platform for Visible-to-Near-Infrared Applications via Micro-Transfer Printing

Konstantinos Akritidis, Gaudhaman Jeevanandam, Manuel Reza, Maximilien Billet et autres

The commercialization of next-generation technologies, including optical interconnects, quantum computing, AR/VR, and medical diagnostics, requires a low-loss photonic platform offering compact, multifunctional systems in the visible and near-infrared range. Although silicon nitride (SiN) is an excellent material due to its ultra-low loss …

Heterogeneously integrated evanescently coupled lasers emitting in the submicrometre wavelength range

Konstantinos Akritidis, M. Billet, Max Kiewiet, Jan‐Philipp Koester et autres

Owing to its broad transparency window, ultra-low propagation losses, and compatibility with complementary metal–oxide–semiconductor (CMOS) fabrication processes, silicon nitride (SiN) has emerged as a highly attractive platform for extending integrated photonics into the visible and near-infrared spectrum. By incorporating active components such …

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High-quality Al(Ga)N templates and their influence on UV LED performance

Sylvia Hagedorn, Tim Kolbe, Anna Mogilatenko, Jens Raß et autres

Origin of the efficiency drop in far-UVC LEDs emitting between 218 and 238 nm

Jakob Höpfner, Paula Vierck, Tim Kolbe, Sylvia Hagedorn et autres

The rapid drop in the external quantum efficiency (EQE) of light emitting diodes (LEDs) in the far-ultraviolet-C (far-UVC) spectral range with emission wavelengths between 218 and 238 nm toward shorter wavelengths has been investigated. AlGaN far-UVC LED heterostructures with different emission wavelengths …

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Diode Laser Technology for Inertial Fusion Energy: Techniques for Scaling Yield and Power

Paul A. Crump, Pietro Della Casa, Ron Unger, Dominik Martin et autres

Low €/Watt GaAs-based pump diodes are required for hyper-scale applications such as fusion. Progress in facet passivation allows 885 nm single emitters to operate reliably at$40 \mathrm{W} / 200 \mu \mathrm{m}$, equivalent to$1.5 \text{kW} / \text{bar}$(high Watts). Further, multi-wavelength in-situ metrology connects …

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Surface improvement of high temperature annealed Si-doped AlGaN layers

Norzaini Zainal, Sylvia Hagedorn, Nor Syafiqah Azmi, Tim Kolbe et autres

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Impact of Silicon Doping on High‐Temperature Annealed AlN/Sapphire Templates

Sylvia Hagedorn, Tim Kolbe, Anna Mogilatenko, Carsten Netzel et autres

The threading dislocation density (TDD) of epitaxially grown AlN layers on sapphire substrates can be significantly decreased by high‐temperature annealing (HTA). This study employs a process to improve the material quality of such AlN layers that comprises two AlN growth steps and …

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Design and Fabrication of Transfer-Printable Evanescently Coupled GaAs-Based Amplifier Coupons

Jan‐Philipp Koester, Jörg Fricke, H. Wenzel, Pietro Della Casa et autres

GaAs-based quantum well emitters can cover the spectral range from 600 nm to 1200 nm, which is of interest for applications such as quantum optics and biosensing [1]. These applications often require narrow linewidth and widely tunable laser sources based on photonic …

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Heterogeneously Integrated Evanescently Coupled Laser Systems on SiN Emitting in the Near-Infrared Band

Konstantinos Akritidis, Maximilien Billet, Max Kiewiet, Jan‐Philipp Koester et autres

Silicon nitride (SiN) with its ultra-low loss has emerged as a powerful passive platform for visible photonics [1], enabling a wide range of applications such as optical coherence tomography. Central to the development of such systems is the integration of laser sources …

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Hetero-integration of Diamond Nanostructures on AlGaN-based Photonic Circuits

Domenica Bermeo Alvaro, Sinan Gündoğdu, Lea M. Rektorschek, Marco E. Stucki et autres

Recently, many efforts have been made in the development of large quantum networks, which rely on the generation and distribution of entanglement between their nodes. Spin-photon interfaces are crucial for these networks, as they enable the distribution and storage of quantum information …

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