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Profil bibliographique

Benjamin Gapp

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

4Publications signalées
3Citations signalées
1Affiliations récentes

Les institutions déclarées

Les domaines associés

Silicon and Solar Cell TechnologiesSemiconductor materials and interfacesSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis

Les publications récentes

Accès ouvert 2025 article OpenAlex

TiN x and TiO x /TiN x Barrier Layers for Al‐Based Metallization of Passivating Contacts in Si Solar Cells

Benjamin Gapp, Heiko Plagwitz, Giso Hahn, Barbara Terheiden

A solution is presented for Ag‐free contacting of passivating contacts for crystalline Si‐based solar cells. In particular, a Ti‐based diffusion barrier layer is introduced between the polycrystalline‐Si of the passivating contact and standard screen‐printed Al‐paste, in order to prevent Al/Si alloying during …

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2 citations physica status solidi (RRL) - Rapid Research Letters
Accès ouvert 2024 conference-paper OpenAlex

RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts

Benjamin Gapp, Heiko Plagwitz, Giso Hahn, Barbara Terheiden

We investigate TiNx layers deposited via RF magnetron sputtering on their efficacy as a diffusion barrier layer between Al and tunnel oxide passivated contact layer stacks during contact formation in a fast firing process. We obtain implied open-circuit voltage (iVOC) from photo-conductance …

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0 citations SiliconPV Conference Proceedings
Accès ouvert 2024 conference-paper OpenAlex

PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts

David Bäurle, Benjamin Gapp, Giso Hahn, Heiko Plagwitz et autres

We investigate the barrier properties of phosphorus-doped Si-rich silicon carbide (SixCy) thin films deposited by PECVD against Al/Si alloying in the context of poly-Si/SiOx passivating contacts. The stability of the implied open circuit voltage (iVOC) after firing of single-sided, full area screen-printed …

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0 citations SiliconPV Conference Proceedings
Accès ouvert 2023 article OpenAlex

Model for contact formation of novel TeO2 containing Pb-free silver paste on n+ and p+ doped crystalline silicon

Fabian Geml, Benjamin Gapp, Simon Johnson, Patricia Sutton et autres

Silver (Ag) pastes are widely used in the global market for most solar cell architectures. Thereby, lead (Pb) is no longer wanted in productions for environmental reasons. In this work, a model for the contact formation between Pb-free, tellurium oxide (TeO2) containing …

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1 citation EPJ Photovoltaics

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