Accès ouvert
2025
article
OpenAlex
Benjamin Gapp, Heiko Plagwitz, Giso Hahn, Barbara Terheiden
A solution is presented for Ag‐free contacting of passivating contacts for crystalline Si‐based solar cells. In particular, a Ti‐based diffusion barrier layer is introduced between the polycrystalline‐Si of the passivating contact and standard screen‐printed Al‐paste, in order to prevent Al/Si alloying during …
de
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Accès ouvert
2024
conference-paper
OpenAlex
Benjamin Gapp, Heiko Plagwitz, Giso Hahn, Barbara Terheiden
We investigate TiNx layers deposited via RF magnetron sputtering on their efficacy as a diffusion barrier layer between Al and tunnel oxide passivated contact layer stacks during contact formation in a fast firing process. We obtain implied open-circuit voltage (iVOC) from photo-conductance …
de
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Accès ouvert
2024
conference-paper
OpenAlex
David Bäurle, Benjamin Gapp, Giso Hahn, Heiko Plagwitz et autres
We investigate the barrier properties of phosphorus-doped Si-rich silicon carbide (SixCy) thin films deposited by PECVD against Al/Si alloying in the context of poly-Si/SiOx passivating contacts. The stability of the implied open circuit voltage (iVOC) after firing of single-sided, full area screen-printed …
de
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Accès ouvert
2023
article
OpenAlex
Fabian Geml, Benjamin Gapp, Simon Johnson, Patricia Sutton et autres
Silver (Ag) pastes are widely used in the global market for most solar cell architectures. Thereby, lead (Pb) is no longer wanted in productions for environmental reasons. In this work, a model for the contact formation between Pb-free, tellurium oxide (TeO2) containing …
de, gb
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