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Profil bibliographique

Laurentiu Braic

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

32Publications signalées
409Citations signalées
1Affiliations récentes

Les institutions déclarées

Les domaines associés

Ga2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis TechniquesGaN-based semiconductor devices and materialsBoron and Carbon Nanomaterials Research

Les publications récentes

Accès ouvert 2026 article OpenAlex

PdNeuRAM: forming-free, multi-bit Pd/HfO2 ReRAM for energy-efficient neuromorphic computing

Erbing Hua, Theofilos Spyrou, Majid R. Ahmadi, Hanzhi Xun et autres

Memristor technology offers a promising route toward energy-efficient computing but faces challenges including resistance drift, variability, and the need for electroforming. Filamentary resistive random-access memory, one of the most studied memristive platforms, typically requires a high-voltage electroforming step to initiate conductive filaments, …

nl, sa, de (code pays fourni par la source)

0 citations Communications Engineering
Accès ouvert 2026 article OpenAlex

PdNeuRAM: forming-free, multi-bit Pd/HfO2 ReRAM for energy-efficient neuromorphic computing

Erbing Hua, Theofilos Spyrou, Majid Ahmadi, Abdul Momin Syed et autres

Memristor technology offers a promising route toward energy-efficient computing but faces challenges including resistance drift, variability, and the need for electroforming. Filamentary resistive random-access memory, one of the most studied memristive platforms, typically requires a high-voltage electroforming step to initiate conductive filaments, …

nl, sa, de (code pays fourni par la source)

0 citations Communications Engineering
2025 article OpenAlex

Titanium Nitride Films as Durable, Enhancing Windows for Electrochemical Infrared Spectroscopy

Nursaya Zhumabay, Jeremy A. Bau, Laurentiu Braic, Huabin Zhang et autres

As electrochemical reactions become more central to the green energy transition, spectroscopic means to characterize these reactions are becoming more valuable. Electrochemical attenuated total reflectance – surface enhanced infrared spectroscopy (ATR-SEIRAS) is of particular note for its ability to characterize molecules at …

sa, ca, us (code pays fourni par la source)

1 citation ACS Applied Materials & Interfaces
Accès ouvert 2024 article OpenAlex

Electronic and structural characteristics of a polycrystalline IrO 2 :Li/(100)-oriented Si pn heterojunction

Abdullah Alquwayzani, Laurentiu Braic, Mohamed Ben Hassine, Mohamed Nejib Hedhili et autres

Achieving optimal band alignment and efficient p-type conductivity is a critical challenge for the heterogeneous integration of wide bandgap materials onto silicon (Si), a key step in revolutionizing next-generation integrated circuits (ICs). In this work, we report what we believe to be …

sa, ae (code pays fourni par la source)

0 citations Optical Materials Express
Accès ouvert 2024 preprint OpenAlex

Electronic and structural characteristics of a polycrystalline IrO₂:Li/(100)-oriented Si pn heterojunction

Abdullah Alquwayzani, Laurentiu Braic, Mohamed Ben Hassine, Mohamed Nejib Hedhili et autres

Achieving optimal band alignment and efficient p-type conductivity is a critical challenge for the heterogeneous integration of wide bandgap materials onto silicon (Si), a key step in revolutionizing next-generation integrated circuits (ICs). In this work, we report what we believe to be …

0 citations
Accès ouvert 2024 preprint OpenAlex

Electronic and structural characteristics of a polycrystalline IrO₂:Li/(100)-oriented Si pn heterojunction

Abdullah Alquwayzani, Laurentiu Braic, Mohamed Ben Hassine, Mohamed Nejib Hedhili et autres

Achieving optimal band alignment and efficient p-type conductivity is a critical challenge for the heterogeneous integration of wide bandgap materials onto silicon (Si), a key step in revolutionizing next-generation integrated circuits (ICs). In this work, we report what we believe to be …

0 citations
Accès ouvert 2024 preprint OpenAlex

Electronic and structural characteristics of a polycrystalline IrO₂:Li/(100)-oriented Si pn heterojunction

Abdullah Alquwayzani, Laurentiu Braic, Mohamed Ben Hassine, Mohamed Nejib Hedhili et autres

Achieving optimal band alignment and efficient p-type conductivity is a critical challenge for the heterogeneous integration of wide bandgap materials onto silicon (Si), a key step in revolutionizing next-generation integrated circuits (ICs). In this work, we report what we believe to be …

0 citations
Accès ouvert 2024 article OpenAlex

Tracking Water Splitting Activity by Cocatalyst Identity in SrTiO3

Nursaya Zhumabay, Jeremy A. Bau, Rafia Ahmad, Laurentiu Braic et autres

Photocatalytic water splitting is the most idealistic route to green hydrogen production, but the extensive material requirements for this reaction make it difficult to realize good photocatalysts. Noble metal cocatalysts are often added to photocatalysts to aid in charge separation and improve …

sa (code pays fourni par la source)

10 citations Small Structures
2024 conference-paper OpenAlex

Li-doped IrO2/Si heterojunctions for CMOS-integrated optoelectronics

Abdullah Alquwayzani, Laurentiu Braic, Mohamed Nejib Hedhili, Tien Khee Ng et autres

The heterojunction of polycrystalline Li-doped IrO2, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive x-ray spectroscopy mapping confirmed the films’ …

sa, ca (code pays fourni par la source)

0 citations
Accès ouvert 2022 article OpenAlex

Optical and interfacial characteristics of a heterojunction between (2¯01)-oriented single-domain β-(In 0.072 Ga 0.928 ) 2 O 3 and α-Al 2 O 3 crystals

Nasir A. Alfaraj, Kuang‐Hui Li, Laurentiu Braic, Mohamed Nejib Hedhili et autres

In this article, we determine the band alignment at the thermodynamically stable heterointerface between a ( 2 ¯ 01 )-oriented single-domain β -(In 0.072 Ga 0.928 ) 2 O 3 crystal and bulk c -plane sapphire, namely, (0001)-oriented α -Al 2 O …

sa (code pays fourni par la source)

3 citations Optical Materials Express
2022 conference-paper OpenAlex

Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon

Nasir A. Alfaraj, Kuang‐Hui Li, Chun Hong Kang, Laurentiu Braic et autres

A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of …

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1 citation

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