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Profil bibliographique

Kyoungjun Lee

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

54Publications signalées
1468Citations signalées
4Affiliations récentes

Les institutions déclarées

Les domaines associés

Semiconductor materials and devicesElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingMXene and MAX Phase Materials

Les publications récentes

Accès ouvert 2026 article OpenAlex

Local probing of superconductivity at oxide interfaces with atomic force microscopy

Dilek Yıldız, S Kim, Dengyu Yang, Muqing Yu et autres

Abstract Superconductivity in strontium titanate has remained enigmatic for over 50 years. The LaAlO 3 /SrTiO 3 (LAO/STO) heterointerface enables systematic dimensional confinement, from two-dimensional electron gas to quasi-one-dimensional nanostructures, providing unprecedented access to this quantum state. While transport measurements in patterned …

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0 citations Communications Physics
Accès ouvert 2026 article OpenAlex

Bulk‐Like Spin Cycloid and Fast Switching in Freestanding BiFeO 3

Pratap Pal, Xiaoxi Deng, Gi‐Yeop Kim, Kyoungjun Lee et autres

ABSTRACT The spin cycloid characteristic of noncollinear antiferromagnets offers significant potential for energy‐efficient, magnon‐mediated spintronic applications. Multiferroic BiFeO 3 is among the most promising candidate materials because its antiferromagnetic order can be controlled by an electric field. However, in epitaxial BiFeO 3 …

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0 citations Advanced Functional Materials
Accès ouvert 2026 preprint OpenAlex

Electric-Field-Induced Second Harmonic Generation at a Reconfigurable LaAlO$_3$/SrTiO$_3$ Nanojunction

Pubudu Wijesinghe, Melanie Dieterlen, Kyoungjun Lee, Ahmed Omran et autres

Electrically tunable nonlinear optical responses at the nanoscale remain challenging to achieve because conventional nonlinear materials lack the combination of large susceptibility, nanoscale confinement, and in situ reconfigurability. Here we report electric-field-induced second harmonic (EFISH) generation from a nanoscale tunnel junction defined …

0 citations arXiv (Cornell University)
Accès ouvert 2026 article OpenAlex

Bulklike Costless Domain Walls Driven by Phonon Pair Condensation in HfO 2

Anonymous, Pawan Kumar, Kyoung‐June Go, Chang Hoon Kim et autres

Ferroelectric domain walls are described as interfacial regions between oppositely polarized domains, where the original bulk distortions are suppressed or reconstructed at energetic cost. Here, we demonstrate that Pca 2 1 HfO 2 exhibits a distinct ferroelectric domain wall where the polarization-reversal …

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0 citations Physical Review X
Accès ouvert 2026 preprint OpenAlex

Imaging GHz surface acoustic wave modes in electrostricted LaAlO$_3$/SrTiO$_3$ heterostructures

Ranjani Ramachandran, Sayanwita Biswas, Prithwijit Mandal, Kyoungjun Lee et autres

The LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface hosts a gate-tunable superconducting two-dimensional electron gas (2DEG) which can be programmed to create quantum devices such as ballistic electron waveguides and quantum dots. To fully exploit this platform for quantum transport, a key requirement is the ability …

0 citations arXiv (Cornell University)
Accès ouvert 2026 other OpenAlex

Imaging GHz surface acoustic wave modes in electrostricted LaAlO3/SrTiO3 heterostructures

Patrick Irvin, Chang-Beom Eom, Prithwijit Mandal, Kyoungjun Lee et autres

The LaAlO3/SrTiO3 (LAO/STO) interface hosts a gate-tunable superconducting two-dimensional electron gas (2DEG) which can be programmed to create quantum devices such as ballistic electron waveguides and quantum dots. To fully exploit this platform for quantum transport, a key requirement is the ability …

0 citations AIP Publishing
Accès ouvert 2026 article OpenAlex

Imaging GHz surface acoustic wave modes in electrostricted LaAlO3/SrTiO3 heterostructures

Ranjani Ramachandran, Sayanwita Biswas, Prithwijit Mandal, Kyoungjun Lee et autres

The LaAlO3/SrTiO3 (LAO/STO) interface hosts a gate-tunable superconducting two-dimensional electron gas (2DEG), which can be programmed to create quantum devices, such as ballistic electron waveguides and quantum dots. To fully exploit this platform for quantum transport, a key requirement is the ability …

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0 citations Applied Physics Letters
Accès ouvert 2026 preprint OpenAlex

Local probing of superconductivity at oxide interfaces with atomic force microscopy

Dilek Yildiz, Sungmin Kim, Dengyu Yang, Muqing Yu et autres

Superconductivity in strontium titanate has remained enigmatic for more than 50 years. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerface enables systematic dimensional confinement, from a two-dimensional electron gas to quasi-one-dimensional nanostructures, providing access to this quantum state. Transport measurements in patterned devices reveal puzzling phenomena, …

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0 citations arXiv (Cornell University)
Accès ouvert 2026 article OpenAlex

Electrical characterization of high-k ( k > 115) crystalline SrTiO3 (STO) thin film integration with GaN with nanomembrane transfer process

Md Tahmidul Alam, Kyoungjun Lee, Guangying Wang, Chang-Beom Eom et autres

Abstract High-permittivity ( k > 115), crystalline SrTiO 3 (STO) thin films were transferred on GaN using a nanomembrane transfer technique for potential applications in high-voltage power devices, including transistors and diodes. The electrical properties of the transferred STO films were systematically …

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0 citations Semiconductor Science and Technology
Accès ouvert 2026 article OpenAlex

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Ruiqi Sun, Ahmed Omran, Muqing Yu, Kyoungjun Lee et autres

ABSTRACT Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the …

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0 citations Advanced Electronic Materials

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