Tiancheng Gong

Revealing wake-up mechanism in antiferroelectric Hf x Zr 1− x O 2 capacitors through spatially selective wake-up

Xiuyi Wang, Zhiquan He, Yang Yang, Guanlin Li et autres

Abstract Antiferroelectric (AFE) devices are promising for nonvolatile memory applications due to their high endurance and low operating voltage, while their double hysteresis loops and high breakdown fields enable static energy-storage applications. However, their reliability evolution under electric-field cycling and the underlying …

Geometry-Aware Phase-Field Modeling of Breakdown in HZO Trench FeCAPs

Qingxiao Zhu, Yihao Chen, Dongping Qiao, Yuanquan Huang et autres

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Role of Interlayer and Interfacial Traps in Endurance Degradation of FeFETs

Zuowei Zhang, Yuanquan Huang, Junshuai Chai, Xiaolei Wang et autres

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Modulating Oxygen Vacancy Concentration for High-Performance Undoped HfO 2 Ferroelectric Capacitors

Xuanxi Liu, Yang Yang, Guanlin Li, Zhiquan He et autres

Ferroelectric HfO₂ thin film has attracted considerable attention due to its ability to induce ferroelectricity without doping. However, its performance is still far inferior to that of doped HfO₂-based ferroelectric films, which limits its further development. In this study, the ferroelectric performance …

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A 3D Stackable 1T2C DRAM with Sidewall Storage Capacitors for High-Density Memory

Ruifeng Tang, Xuedong Zhao, Chuanli Zhang, Xun Yu et autres

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Bayesian neural network with unified entropy source and synapse weights using 3D 16-layer Fe-diode array

Yuanquan Huang, Qiqiao Wu, Tiancheng Gong, Jianguo Yang et autres

Edge artificial intelligence systems require higher frequency due to intensive computational demands, while most traditional entropy sources decay with frequency. This work shows the physical properties of the Fe-diode devices are ideal for edge systems with high frequencies and dramatic temperature changes. …

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Region-Selective Oxygen Vacancy Engineering for Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Processed at 300 °C

Ruifeng Tang, Yifan Zhang, Yang Yang, Xun Yu et autres

The discovery of ferroelectricity in hafnium oxide (HfO 2 ) thin films has positioned it as a leading material for next-generation nonvolatile memory. However, the integration of HfO 2 -based ferroelectric thin films into back-end-of-line (BEOL) processes remains challenging due to the …

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Enhancement of Energy Storage and Efficiency in Antiferroelectric Hf᙮Zr᙮₋₁O₂ Supercapacitors Through Tailored Phase Engineering by Oxygen Vacancy

Xuanxi Liu, Chuhao Yao, Pengfei Jiang, Tiancheng Gong et autres

In this letter, the antiferroelectric (AFE) performance of HfxZr1-xO2(HZO) film is significantly improved by regulating its oxygen vacancy (VO). The gas with different O2flow is used in the HZO films sputter process. Introducing appropriate O2flow enhances both energy storage density (ESD) and …

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Influence of Sc, Y, and B dopants on structural distortions and polarization switching in AlN-based ferroelectrics

Xun Yu, Ruifeng Tang, Xiao Long, Yuan Wang et autres

Doped aluminum nitride (AlN) ferroelectrics exhibit a unique combination of high coercive fields and large remanent polarization, offering strong potential for enabling high-performance ferroelectric memory devices. Common dopants such as Sc, Y, and B have been widely used, but how they affect …

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Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies

Yu‐Lin Song, Pengfei Jiang, Xu Pan, Xueyang Peng et autres

Abstract The novel HfO2-based ferroelectric field effect transistor (FeFET) is considered a promising candidate for next-generation nonvolatile memory (NVM). However, a series of reliability issues caused by the fatigue effect hinder its further development. Therefore, a comprehensive understanding of the fatigue mechanisms …

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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

Xiao Yu, Ni Zhong, Yan Cheng, Tianjiao Xin et autres

Abstract Hafnium (Hf) oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO 2 ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at …

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Metal-insulator-metal (MIM) star-disc nanoantenna for molecular sensing by surface-enhanced infrared absorption (SEIRA) spectroscopy

Yue Li, Yunfei Luo, Xunjie Lin, Dongxian Li et autres

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