Koichi Murata

Characterization and modeling of forward current conduction in 4H-SiC PiN diodes based on device simulation analysis

Satoshi Asada, Koichi Murata, Tsubasa Shiono, Naoto Ishibashi et autres

The decay curves in time-resolved photoluminescence (TRPL) characteristics of n-type 4H-SiC epilayers were simulated by a technology computer aided design (TCAD) and compared with experimental results. In the simulation of TRPL decay curves, the direct recombination rate in the epilayer after illuminating …

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Photoionization Current Spectroscopy of Individual Silicon Vacancies in Silicon Carbide

K. Okajima, Tetsuri Nishikawa, Koichi Murata, Takeshi Ohshima et autres

Defect charge-state dynamics are central to both spin-photon interfaces and photoelectrical spin readout. Despite the significance of silicon vacancies (V1/V2) in silicon carbide (4H-SiC) for both applications, their ionization behavior has remained unclear because conventional optical charge-state analysis is prevented by undetectable …

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The critical excitation intensity for expansion of single Shockley stacking fault in 4H-silicon carbide: Experimental study

Koji Maeda, Koichi Murata, Satoshi Asada, Hidekazu Tsuchida

Mechanical stressing experiments devised to evaluate the formation energy of a single Shockley stacking fault (1SSF) γ1SSF have been conducted with the use of photoluminescence imaging of partial dislocations bounding 1SSFs in various 4H-SiC epilayers. Elaborate care was taken to avoid the …

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The critical excitation intensity for expansion of single Shockley stacking fault in 4H-silicon carbide: Theoretical study

Koji Maeda, Satoshi Asada, Koichi Murata, Hidekazu Tsuchida

Modeling the single Shockley stacking fault (1SSF) in 4H-silicon carbide as a classical well built in the bottom of the conduction band, technical computer-aided design simulations were conducted rigorously incorporating carrier recombination at the 1SSF. The experimentally observed temperature dependences of the …

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Hybrid Quantum Sensing in 4H‐SiC Enabled by the Integration of Vanadium and Silicon Vacancy for Simultaneous Temperature and Magnetic Field Detection

Shin Sato, Satoshi Asada, Koichi Murata

ABSTRACT Isolated vanadium (V) ions and silicon vacancies (V Si − ) in 4H‐SiC are promising candidates for quantum light sources and sensors owing to their stable near‐infrared photon emission and optically addressable spin states. In this paper, we present a hybrid …

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Vanadium photoluminescence in 3C-SiC

Danial Shafizade, Valdas Jokubavičius, Koichi Murata, Hidekazu Tsuchida et autres

Early investigations on vanadium in the cubic 3C-SiC polytype concluded that the luminescence of the center is not possible because the excited state is degenerate with the conduction band. However, later work refuted this notion, demonstrating a doublet in photoluminescence (PL) at …

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Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers

Masashi Kato, Hisaya Sato, Tomohisa Kato, Koichi Murata et autres

We report a novel method known as focused light birefringence for the three-dimensional observation of dislocations in silicon carbide (SiC) wafers. Dislocations in SiC wafers can adversely affect device performance and production yield, which necessitates their characterization. The existing methods for observing …

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Coherent photoelectrical readout of single spins in silicon carbide at room temperature

Tetsuri Nishikawa, Naoya Morioka, Hiroshi Abe, Koichi Murata et autres

Establishing a robust and integratable quantum system capable of sensitive qubit readout at ambient conditions is a key challenge for developing prevalent quantum technologies, including quantum networks and quantum sensing. Paramagnetic colour centres in wide bandgap semiconductors provide optical single-spin detection, yet …

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Development and Application of Value Karuta to Understand Value in Lean Management: Initial Small-group Trial in Japan and the UK

Tamao Kobayashi, Koichi Murata

This study proposes the Value Karuta (VK), an application of the traditional Japanese card game karuta. Its goal is to contribute to the understanding of value, which is the first principle of lean management. After stating the problems of lean management and …

Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes

Satoshi Asada, Koichi Murata, Hidekazu Tsuchida

The impacts of single Shockley-type stacking faults (1SSFs) on the electrical characteristics of 4H-SiC PiN diodes were examined by fabricating the PiN diodes containing the 1SSF monolayer in the active area with a covering ratio of unity and evaluating the forward current–voltage …

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Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers

Fumihiro Fujie, Tsubasa Shiono, Koichi Murata, Naoto Ishibashi et autres

For large-diameter (150 mm) SiC epitaxial wafers with thick n− epilayers, stress analysis based on the finite element method and defect characterization near the epi/sub interface by synchrotron x-ray topography were performed. Observations on epitaxial wafers with epilayer thicknesses of 10, 20, …

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Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

Manuel Belanche, Yoshiyuki Yonezawa, R. Heller, Arnold Milenko Müller et autres

This study explores high-energy aluminum (Al) implantation above 10 MeV as a fabrication process to facilitate the creation of deep doping regions in silicon carbide (SiC). Experimental investigations were conducted to evaluate the technical feasibility of ultra-high energy implantation and high-energy channeling …

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