Accès ouvert
2026
article
OpenAlex
Longzhao Liu, Hongwei Zheng, Zhihao Han, Shaoting Tang
The coevolution of structure and dynamics, known as adaptation, is a fundamental property in various systems and drives diverse emergent behaviors. However, the adaptation in most works primarily stems from pairwise situations, which is insufficient to capture ubiquitous higher-order characteristics of real …
cn
(code pays fourni par la source)
Accès ouvert
2026
preprint
OpenAlex
Yajing Hao, Longzhao Liu, Xin Eric Wang, Zhihao Han et autres
Network dismantling aims to identify a node removal sequence that can rapidly destroy network connectivity, which is an important problem for understanding the structural fragility of complex systems and designing intervention strategies. Existing studies mainly focus on pairwise networks or assume weak-deletion …
cn
(code pays fourni par la source)
2024
article
OpenAlex
Xiaohui Sun, Zhihao Han, Xiangsheng Chen, Minghui Liu et autres
cn, Égypte
(code pays fourni par la source)
2024
article
OpenAlex
Xiaohui Sun, Haibin Zhang, Zhihao Han, Shuhua Huang et autres
cn
(code pays fourni par la source)
2024
article
OpenAlex
Zhihao Han, Longzhao Liu, Xin Wang, Yajing Hao et autres
Network modeling characterizes the underlying principles of structural properties and is of vital significance for simulating dynamical processes in real world. However, bridging structure and dynamics is always challenging due to the multiple complexities in real systems. Here, through introducing the individual's …
cn
(code pays fourni par la source)
Accès ouvert
2023
article
OpenAlex
Lida Xu, L C Gao, Ting Ni, J J Wang et autres
Abstract Partially-depleted silicon-on-insulator (PDSOI) MOSFETs with full dielectric isolation structure are widely used in the high temperature field of 225 °C, but affected by the threshold voltage and carrier mobility, the saturated output current has a rate of change as high as …
cn
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Accès ouvert
2022
article
OpenAlex
Shanshan Zhao, L C Gao, Xiaojing Li, H Y Zhang et autres
Abstract Partially depleted silicon-on-insulator (PDSOI) MOSFETs are widely used in 225 °C high-temperature electronic system applications with integrated circuits. But the process node stays at 0.5 µm for a long time and no further breakthrough can be achieved. This paper reports the …
cn
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2018
article
OpenAlex
Huiping Zhu, Zeyu Zheng, B Li, B H Li et autres
Abstract In our work, insights into the total dose response and native point defect behavior in the Al 2 O 3 gate dielectric during irradiation were gained by gamma-ray irradiation experiments and first-principles calculations. It is found that the O vacancy (V …
cn, us
(code pays fourni par la source)