Jing Ning

Analytical investigation on field-effect mobility and performance of HEMTs with low contact resistance via regrowth and ion implantation

Ziyan Wan, Tao He, Jing Ning, Jin Rao et autres

Abstract Based on the ultra-low contact resistance with values of 0.05 and 0.13 Ω•mm, this work focuses on investigating the impact of regrowth and ion-implanted ohmic contact processes on the field effect mobility of AlGaN/GaN high-electron-mobility transistors (HEMTs), along with their consequences …

cn, gb (code pays fourni par la source)

Asymmetric WSe2 reconfigurable devices for logic-in-memory computing: contact barrier engineering and floating gate-controlled operation

Wancai Liu, Xue Shen, Jiazhou Guo, Wenxuan Ma et autres

cn (code pays fourni par la source)

Non-parametric analysis of transient data: a pseudo-competing event approach

Y. Shang, Jing Ning, Kentaro Minagawa, 周寿好

Transient data analysis, which evaluates the impact of ordinal time-dependent covariates on survival, poses unique challenges. In a motivating study investigating increasing mixed chimerism (IMC) as a biomarker for disease relapse for post-transplant leukemia patients, existing approaches prove inadequate for a fallacious …

us (code pays fourni par la source)

Suppressing random distortion via electron distribution optimization for long-term cycling of high-voltage KVPO4F

Tianqi Wang, Xin He, Min Jie Zhou, Jing Ning et autres

cn (code pays fourni par la source)

Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy

Yaning Zhang, Haidi Wu, Haoran Zhang, Shiyu Li et autres

cn (code pays fourni par la source)

First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs

Jincheng Zhang, Shudong Huo, ZhengXing Zhang, Mengjiao Xiang et autres

cn (code pays fourni par la source)

Van der Waals Epitaxy of β-Ga2O3 Films on Polycrystalline Diamond Substrates Enabled by Graphene Interlayer for Efficient Thermal Management

Jing Ning, zhichun Yang, Jieru Zhai, Dong Wang et autres

cn (code pays fourni par la source)

Thick single-crystal rhombohedral boron nitride as a substrate platform enabling high-performance III-V electronics

Lain‐Jong Li, Pengfei Yang, Haidi Wu, Quan Xie et autres

sg, cn, hk (code pays fourni par la source)

Coherent Interface Growth of PCuAg‐Si Anode for Long‐Term Cycling Stability in All‐Solid‐State Batteries

Qiao Cu, Yewei Guo, Min Jie Zhou, Jing Ning et autres

Abstract Sulfide all solid‐state batteries (ASSBs) with Si‐based anode offers a promising route to high energy density of Energy Storage Devices. Nevertheless, the unstable interface of ASSBs remains a critical challenge, especially causing issues such as decomposition of sulfide solid electrolyte (SSE). …

cn (code pays fourni par la source)

Improved DC and RF performance AlGaN/GaN HEMTs with suppressed short-channel effect

Jing Ning, Yiran Li, Haoran Zhang, Yue Hao et autres

As RF systems move into the millimeter-wave band, AlGaN/GaN HEMT devices require further improvements in cutoff frequency (𝑓𝑇 and maximum oscillation frequency (𝑓𝑚𝑎𝑥) . By simulating AlGaN/ GaN HEMT devices with varying thicknesses of the AlGaN barrier layer and gate lengths, the …

cn (code pays fourni par la source)

Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates

Jing Ning, Zhichun Yang, Haidi Wu, X.-Y. Dong et autres

Abstract The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga 2 O 3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application. This study presents van der …

cn (code pays fourni par la source)

High-On/Off-Current-Ratio AlGaN/GaN HEMTs via Van Der Waals Epitaxy GaN With a BN Inset Layer

Haoran Zhang, Jing Ning, Yiran Li, Xue Jin Shen et autres

In nitride heteroepitaxy, lattice mismatch and thermal stress inevitably induce dislocation proliferation and defect formation, which critically degrade device reliability. In this letter, we demonstrate the high-quality epitaxial growth of nitride heterojunction structures on two-dimensional high-quality boron nitride (h-BN) materials via van …

cn (code pays fourni par la source)