TL Characteristics of CsI Single Crystal Scintillators and their Growth Conditions

Le résumé fourni par la source

Changes in transmission and thermoluminescent characteristics were used in order to find out the optimum growth condition of CsI single crystal scintillators which were made relatively defect-free using Czochralski method. Impurity distribution in the crystals and the intensity and number of thermoluminescent glow peaks decreased as the process of crystallization was repeated. The direction of crystal growth turned out to be (110), the crystal structure of grown CsI was bee, and its lattice constant was found to be . The activation energy (trap depths) of CsI:3rd was 0.45 eV and its frequency factor was .

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