44‐4: Enhancement of Persistent Photoconductive Effect in IGZO TFTs Passivated by MoOx:Ta Films

Le résumé fourni par la source

For the application of indium‐gallium‐zinc‐oxide thin film transistors (IGZO TFTs) as optoelectronic memories, enhancing their persistent photoconductive (PPC) effect becomes necessary. This was achieved through increasing the oxygen flow rate during the sputtering of the active layers, utilizing a tantalum‐doped molybdenum oxide (MoOx:Ta) passivation layers, and optimizing the other key fabrication process parameters. As the oxygen flow rate for IGZO sputtering rises, the concentration of oxygen vacancies decreases; whereas, the PPC effect in the corresponding device becomes more pronounced. This is assumed to result from the dominant role of hole trapping to induce the PPC effect. Furthermore, the influences of active layer thickness, passivation layer thickness, oxygen flow rate, annealing temperature, and the other processing factors on the PPC effect were at length investigated. Within acceptable parameter ranges, the retention capability of the photocurrent is improved at the cost of erasure efficiency.

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