Controlled Growth of Boron Nitride in Various Phases

Résumé fourni par la source

ABSTRACT Boron nitride (BN) exists in multiple structural phases, including hexagonal (hBN), rhombohedral (rBN), cubic (cBN), and amorphous (aBN), each characterized by distinct sp 2 or sp 3 bonding configurations, stacking periodicities, and thermodynamic stabilities. These structural variations yield exceptional electronic, optical, and mechanical properties while imposing rigorous thermodynamic and kinetic constraints on their targeted synthesis. This review comprehensively summarizes recent progress in the phase‐selective growth of BN. For the sp 2 ‐hybridized phases, precise management of adatom surface diffusion and edge‐attachment kinetics, coupled with substrate symmetry breaking, has enabled the aligned coalescence of hBN islands into wafer‐scale single crystals and the templated stabilization of rBN with exclusive ABC stacking. For sp 3 ‐bonded cBN, overcoming the massive energetic barrier of this metastable phase requires either extreme high‐pressure high‐temperature thermodynamic driving forces or localized energetic ion activation combined with strain‐absorbing, lattice‐matched templates. For aBN, low‐temperature deposition routes effectively quench adatom mobility, kinetically trapping species into conformal, ultrathin disordered networks prioritized for advanced dielectric integration. Emerging research must address the thermodynamic limitations of scalable reactors, the atomic‐level control of point defects, and the perfection of translational registry at interfaces to fully translate laboratory‐quality BN into reliable technological applications.

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