Metal Halide Perovskite‐Based Field‐Effect Transistors

Résumé fourni par la source

Perovskites have attracted significant attention in recent years owing to their outstanding optoelectronic properties, solution processability, and tunable band structures, which together have enabled strong progress in photovoltaics, light-emitting devices, and photodetectors. Among these applications, perovskite field-effect transistors (PeFETs) have emerged as a key platform for probing charge transport and interfacial phenomena in perovskite materials, and have become a central focus of perovskite electronics research. This review summarizes recent advances in PeFETs, providing a systematic overview of material systems, device architectures, morphology control, interface engineering, and performance optimization. It also discusses the major challenges that currently limit PeFET development, including poor material stability, electrical instability arising from ion migration and trap states, and insufficient uniformity in large-area fabrication. Looking ahead, low-dimensional perovskite structures, A-site cation and organic ligand engineering, and multifunctional interface design are expected to play pivotal roles in enabling high-performance, stable, and environmentally sustainable PeFETs for practical applications.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.