Engineered AlGaN/GaN HEMT With β ‐Ga 2 O 3 Buffer, Graded AlGaN Back Barrier, and Gate Field Plate for Enhanced Breakdown of 544 V and RF Performance of 110 GHz

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This work systematically investigates the DC and radio‐frequency (RF) performance of AlGaN/GaN HEMTs incorporating an ultra‐wide‐bandgap β ‐Ga 2 O 3 buffer, a graded AlGaN back barrier, and a gate field plate (GFP). Compared with a conventional GaN‐buffer HEMT, the β ‐Ga 2 O 3 device achieves a higher ON‐state current (1.58 A/mm), lower leakage current (1.55 nA/mm), improved transconductance (229 mS/mm), and enhanced breakdown voltage (299 V vs. 217 V) due to superior carrier confinement and electric field management. Reduced gate capacitance (0.923 pF/mm) further improves RF performance, yielding a cutoff frequency of 139 GHz and a maximum oscillation frequency of 402 GHz. Introducing GFP lengths from 50–250 nm further increases the breakdown voltage, reaching 544 V at the optimized 150 nm GFP while maintaining a competitive cutoff frequency of 110 GHz. The corresponding Johnson's figure of merit peaks at 59.84 THz V, indicating an optimal balance between high‐voltage and RF performance, whereas Baliga's figure of merit increases continuously to 2.715 kW/cm 2 with longer GFPs. Additionally, the optimized device exhibits reduced self‐heating and current collapse, demonstrating improved thermal stability, dynamic reliability, and suitability for high‐power, high‐frequency RF applications.

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