Dataset for Spatially Separated Dual Floating-Gate Synaptic Memory Based on Multilayer SnS2 for Neuromorphic Computing

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This dataset contains the experimental and processed data associated with the study "Spatially Separated Dual Floating-Gate Synaptic Memory Based on Multilayer SnS2 for Neuromorphic Computing". The study investigates spatially separated dual floating-gate synaptic transistors based on SnS2/h-BN/1T′-WTe2 and SnS2/h-BN/1T′-MoTe2 van der Waals heterostructures. The dataset covers structural and device characterization, including Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy data, together with electrical transfer characteristics of pristine SnS2 and floating-gate devices. It includes data used for the evaluation of gate-voltage-dependent hysteresis, threshold voltages, memory windows, charge-trapping behavior, ON/OFF current ratios, program/erase operation, endurance, retention and multilevel memory characteristics. Synaptic measurements include conductance modulation under voltage-pulse stimulation, long-term potentiation and long-term depression, and pulse-amplitude- and pulse-width-dependent synaptic behavior. The dataset also includes data associated with the convolutional neural network simulations based on experimentally measured conductance states, including Fashion-MNIST classification performance, normalized synaptic weight evolution, training accuracy and related neuromorphic-computing analysis. The data support the comparison of 1T′-WTe2 and 1T′-MoTe2 as floating-gate materials and the evaluation of the SnS2/h-BN/1T′-WTe2 device for non-volatile memory and neuromorphic computing applications.

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