Nonlinearly-driven memory loss of incubation effects in fused silica excited by near single-cycle laser pulses

Le résumé fourni par la source

The nonlinear interaction of near-infrared ultrashort laser pulses with bulk fused silica at intensities below the catastrophic damage threshold is the birthplace of local electronic excitation events that may relax as point defects. The accumulation of defect centers creates additional sources of electronic excitation, gradually lowering the ionization threshold upon multipulse irradiation. However the use of near single-cycle sub-4 fs pulses erases in a surprising manner the contribution of defects to the damage threshold. This is the result of increasing the strong intensity clamping that limits energy density and therefore carrier collisional multiplication. Thus the role of additional defect sources in the overall carrier population becomes secondary. In addition, the significant spectral broadening creates the premises for impulsive depletion of defect levels.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.