Low-Temperature Ta 2 O 5 ALD on Parylene-C for Flexible and Implantable Electronics

Le résumé fourni par la source

Polymeric substrates are increasingly significant in flexible and implantable electronics. However, the glass transition temperature of polymers like Parylene-C limits their thermal budget and complicates the deposition of high-quality dielectric thin films. Among candidate materials for these applications, tantalum pentoxide (Ta2O5) is particularly interesting due to its dielectric properties, chemical stability, and biocompatibility for implantable devices. However, Ta2O5 atomic layer deposition (ALD) is typically performed at high temperatures, which challenge temperature-sensitive polymer substrates. Here, we investigate the feasibility of lowtemperature thermal Ta2O5 ALD at 80 °C using tris(tertbutoxy)-tris(ethylmethylamino)tantalum as the tantalum precursor and H2O as the co-reactant, targeting polymercompatible integration with Parylene-C. Feasibility was assessed by analyzing temperature-dependent film growth on silicon reference substrates as well as structural and morphological properties of representative Ta2O5 coatings on Parylene-C. The results identify Ta2O5 deposited at 80 °C by ALD as a promising route toward polymer-compatible deposition.

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