Functional Electrothermal SPICE Modeling and Multi-Stage Optimization of GaN HEMTs for Power Conversion Applications

Le résumé fourni par la source

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are emerging as the technology of choice for next-generation power conversion systems, offering switching speeds, on-state resistance, and power density unattainable with silicon or even silicon carbide (SiC) devices. However, the fast switching transients that make GaN attractive also make it a demanding source of electromagnetic interference (EMI), so credible electromagnetic compatibility (EMC) analysis requires an accurate functional device model. This paper addresses the functional electrothermal modeling of a commercial 650 V GaN HEMT (GS66504B) as a prerequisite to EMC validation. The manufacturer-supplied Level 3 SPICE model is evaluated against experimental static (I-V) and dynamic (C-V) measurements. Significant discrepancies motivate an optimization methodology in which an initial manual procedure is superseded by a fully automated pipeline coupling LTspice with a Genetic Algorithm in MATLAB R2025b. A forward/reverse and dual-temperature-segment strategy reduces the mean absolute relative error to below 7% (forward I-V) and 13% (reverse I-V) over 25–100 °C, while a dedicated two-stage C–V optimization reduces the reverse-transfer capacitance error from 95.4% to 2.89%. The resulting compact, unified, and fully validated model underpins the ongoing EMC validation phase, where it will be combined with extracted parasitic and cable models in a DC-DC converter topology.

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