Simulation and optimization of etching depth, wavelength and incident angle for enhanced output light coupling efficiency in dual fill factor for Al 0 . 3 Ga 0 . 7 N and GaN based surface gratings: a comparative study

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Abstract Aluminium gallium nitride (Al 0 . 3 Ga 0 . 7 N) and gallium nitride (GaN) based grating couplers are an efficient solution for optical output coupling in photonic integrated platforms. This work, for the first time, compares Al 0 . 3 Ga 0 . 7 N and GaN based waveguide with a dual fill factor grating structure, revealing the combined effects of etching depth, operating wavelength, and incident angle on achieving high optical outcoupling efficiency. A full-vector finite-element simulation is used to optimize the key structural parameters, including grating period, ridge widths, fill factors, incident angle, and etching depth, to maximize output coupling efficiency. The optimized dual fill factor design exhibits a pronounced wavelength-dependent, etching depth and incident-angle-dependent response and achieves a significantly higher coupling efficiency than a conventional uniform Al 0 . 3 Ga 0 . 7 N/GaN surface grating. These results demonstrate a compact and fabrication-compatible Al 0 . 3 Ga 0 . 7 N/GaN grating design, providing a viable pathway toward high-performance optical output coupling in fully integrated photonic and optoelectronic devices.

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