Structural and morphological evolution of MoSe2 thin films as interlayers in phase-change heterostructures

Le résumé fourni par la source

Molybdenum diselenide (MoSe 2 ) is attracting interest as interlayer material in phase-change memories, where it can limit elemental diffusion and stabilize device operation. Here, we investigate thin MoSe 2 films deposited by RF sputtering at room temperature and analyze their structural and electrical response upon thermal treatment. As-grown films crystallize into a structure compatible with the 2H phase above 250 °C, with the appearance of diffraction peaks and vibrational modes typical of MoSe 2 . This transition is accompanied by a densification of the films and a reorganization of the surface into compact grains, as revealed by X-ray reflectivity and microscopy. Raman spectra show the coexistence of well-defined phonon modes and disorder-related features, while electrical measurements show anomalous behavior after annealing at 300 °C, which may be attributed to morphology-related effects. Importantly, MoSe 2 maintains its stoichiometry after deposition and annealing, demonstrating chemical stability. When integrated into GST225/MoSe 2 heterostructures, the material preserves its integrity and withstands annealing up to 300 °C, confirming its compatibility with phase-change layers to be switched back and forth between their as-grown and crystalline states. These findings support the use of sputtered MoSe 2 as a robust interlayer in next-generation phase change memory devices.

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