Numerical simulation of sidewall angle optimization for enhanced light extraction efficiency in 275 nm double-mesa DUV LEDs

Résumé fourni par la source

One of the main reasons for the low external quantum efficiency (EQE) of deep-ultraviolet light-emitting diodes (DUV LEDs) is insufficient light extraction efficiency (LEE). This study proposed a light extraction enhancement technique based on a double-mesa structure with different sidewall angles, targeting the light confined within the epitaxial layers of AlGaN-based DUV LEDs. By investigating the relationship between the two sidewall angles of the double-mesa DUV LED and the LEE from the bottom of the sapphire substrate, it was found that changing the sidewall angles significantly affects the LEE of the transverse magnetic (TM)-polarized light. For the double-mesa DUV LED, the inclined angle α 1 of the first mesa sidewall was set to 30°, and the inclined angle α 2 of the second mesa sidewall was set to 45°. The overall LEE of the device was 8.846%, an improvement of 36.39% compared with the conventional structure.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.